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Studying Electron Transport Coefficients in C2H4-SiH4 Mixtures Using Bolsig+ Program

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Advances in Engineering Research and Application (ICERA 2020)

Part of the book series: Lecture Notes in Networks and Systems ((LNNS,volume 178))

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Abstract

For the first time the electron transport coefficients in C2H4-SiH4 mixtures were calculated by using the Bolsig+ freeware for the E/N (ratio of the electric field E to the neutral number density N) range of 0.1–1000 Td (Townsend). The electron collision cross section sets for C2H4 and SiH4 molecules were chosen and modified to ensure reliability before calculation. Therefore, the electron transport coefficients in C2H4-SiH4 mixtures are useful for plasma modeling.

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Authors and Affiliations

  1. University of Transport and Communications, Hanoi, Vietnam

    Pham Xuan Hien

  2. Electric Power University, Hanoi, Vietnam

    Tran Thanh Son

  3. Hung Yen University of Technology and Education, Hung Yen, Vietnam

    Do Anh Tuan

Authors
  1. Pham Xuan Hien
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  2. Tran Thanh Son
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  3. Do Anh Tuan
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Corresponding author

Correspondence to Do Anh Tuan .

Editor information

Editors and Affiliations

  1. Department of Computer Science and Automation, Ilmenau University of Technology (IUT), Ilmenau, Germany

    Kai-Uwe Sattler

  2. Faculty of Electronic Engineering, Thai Nguyen University of Technology, Thai Nguyen, Vietnam

    Duy Cuong Nguyen

  3. Faculty of Mechanical Engineering, Thai Nguyen University of Technology, Thai Nguyen, Vietnam

    Ngoc Pi Vu

  4. Hanoi University of Science and Technology, Hanoi, Vietnam

    Banh Tien Long

  5. Institute for Automation and Systems Engineering, Ilmenau University of Technology (IUT), Ilmenau, Germany

    Horst Puta

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Hien, P.X., Son, T.T., Tuan, D.A. (2021). Studying Electron Transport Coefficients in C2H4-SiH4 Mixtures Using Bolsig+ Program. In: Sattler, KU., Nguyen, D.C., Vu, N.P., Long, B.T., Puta, H. (eds) Advances in Engineering Research and Application. ICERA 2020. Lecture Notes in Networks and Systems, vol 178. Springer, Cham. https://doi.org/10.1007/978-3-030-64719-3_81

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  • DOI: https://doi.org/10.1007/978-3-030-64719-3_81

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  • Publisher Name: Springer, Cham

  • Print ISBN: 978-3-030-64718-6

  • Online ISBN: 978-3-030-64719-3

  • eBook Packages: EngineeringEngineering (R0)

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