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Results: NLA Using a Long Pulse Duration XeCl Laser

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Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals

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Abstract

This chapter describes the research done on samples Ti implanted in our facilities at UCM, but laser annealed with the XeCl excimer laser described in Sect. 2.2.1, belonging to SCREEN-LASSE (Paris). This laser features a wavelength of 308 nm, a pulse duration of 150 ns at FWHM and a laser spot of 10 × 10 mm2, which allows for full die exposure processes. A full design of experiment was performed using the new laser, where samples were characterized using electrical and quantum efficiency measurements. Samples were fabricated with different supersaturation conditions, by sweeping the Ti implantation dose and laser fluence. The goal is to find the best candidate in terms of quantum efficiency in the sub-bandgap region (the SWIR range).

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Authors and Affiliations

  1. Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid, Spain

    Daniel Montero Álvarez

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  1. Daniel Montero Álvarez
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Correspondence to Daniel Montero Álvarez .

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Montero Álvarez, D. (2021). Results: NLA Using a Long Pulse Duration XeCl Laser. In: Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals. Springer Theses. Springer, Cham. https://doi.org/10.1007/978-3-030-63826-9_4

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