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Heterostructure Simulation for Optoelectronic Devices Efficiency Improvement

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Software Engineering Perspectives in Intelligent Systems (CoMeSySo 2020)

Part of the book series: Advances in Intelligent Systems and Computing ((AISC,volume 1295))

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Abstract

In this work nitride heterostructures were simulated for optoelectronic devices such as photodetectors (phototransistors) and solar cells for improving their efficiency. The influence of aluminium atoms and doping as well as temperature on AlGaN/GaN-based heterojunction phototransistors characteristics have been studied. The results suggest that the AlGaN/GaN phototransistor with the Al concentration – 28% and the doping concentration - Nd = 2 × 1015 cm−3 and Na = 2.1 × 1016 cm−3, exhibits a considerable sensitivity and the quantum efficiency approaching about 10%. Solar cells model based on GaN/Si heterostructure was created. The optimum heterostructure design and doping profile were defined. Quite high solar cell efficiencies based on n-GaN−p-Si heterostructures such as 14.35% at 1 · AM 1.5 and 21.10% at 1000 · AM 1.5 were achieved.

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Authors and Affiliations

  1. National University of Science and Technology “MISiS”, Moscow, 119049, Russian Federation

    Oleg Rabinovich & Svetlana Podgornaya

Authors
  1. Oleg Rabinovich
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  2. Svetlana Podgornaya
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Corresponding author

Correspondence to Oleg Rabinovich .

Editor information

Editors and Affiliations

  1. Faculty of Applied Informatics, Tomas Bata University in Zlín, Zlín, Czech Republic

    Radek Silhavy

  2. Faculty of Applied Informatics, Tomas Bata University in Zlín, Zlín, Czech Republic

    Petr Silhavy

  3. Faculty of Applied Informatics, Tomas Bata University in Zlín, Zlín, Czech Republic

    Zdenka Prokopova

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Rabinovich, O., Podgornaya, S. (2020). Heterostructure Simulation for Optoelectronic Devices Efficiency Improvement. In: Silhavy, R., Silhavy, P., Prokopova, Z. (eds) Software Engineering Perspectives in Intelligent Systems. CoMeSySo 2020. Advances in Intelligent Systems and Computing, vol 1295. Springer, Cham. https://doi.org/10.1007/978-3-030-63319-6_12

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