Skip to main content
SpringerLink
Log in

Properties of Ammonothermal Crystals

  • Chapter
  • First Online:
Ammonothermal Synthesis and Crystal Growth of Nitrides

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 304))

Abstract

This chapter summarizes the present status of bulk GaN crystals grown by ammonothermal basic and acidic methods, and reviews their intrinsic physical properties. Crystals with low dislocation densities, typically well below 105 cm−2, high crystal lattice flatness, and sharp X-ray rocking curves (typically below 20 arcsec) are reproducibly grown by both methods. High quality strain-free homoepitaxial films have been successfully deposited on both polar and non-polar ammonothermal substrates. Characteristics of testing devices produced using these epitaxial templates confirm the potential of ammonothermal substrates for fabrication of high performance and high yield devices.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 139.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 179.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 179.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. K. Byrappa, M. Yoshimura, Handbook of Hydrothermal Technology (Noyes Publications, Norwich, 2001)

    Google Scholar 

  2. M. Zając, R. Kucharski, K. Grabianska, A. Gwardys-Bak, A. Puchalski, J.Z. Domagala, R. Piotrzkowski, E. Litwin-Staszewska, D. Wasik, M. Bockowski, Prog. Cryst. Growth Charact. Mater. 64, 63 (2018)

    Article  CAS  Google Scholar 

  3. R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, A. Puchalski, Y. Kanbara, K. Yagi, H. Minakuchi, H. Hayashi, J. Cryst. Growth 310, 3911 (2008)

    Article  CAS  Google Scholar 

  4. R. Dwilinski, R. Doradzinski, J. Garczynski, L.P. Sierzputowski, M. Rudzinski, M. Zajac, J. Cryst. Growth 311, 3058 (2009)

    Article  CAS  Google Scholar 

  5. R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, R. Kucharski, M. Zajac, M. Rudzinski, R. Kudrawiec, W. Strupinski, J. Misiewicz, Phys. Status Solidi (A) 208, 1489 (2011)

    Article  CAS  Google Scholar 

  6. Y. Mikawa, T. Ishinabe, S. Kawabata, T. Mochuzuki, A. Kojima, Y. Kagamitani, H. Fujisawa, Proc. SPIE 9363, 936302-1 (2015). R. Kucharski, M. Zajac, M. Rudzinski, R. Kudrawiec, W. Strupinski, J. Misiewicz, Phys. Status Solidi (A) 208, 1489 (2011)

    Google Scholar 

  7. D. Ehrentraut, R.T. Pakalapati, D.S. Kamber, W. Jiang, D.W. Pocius, B.C. Downey, M. McLaurin, M.P. D’Evelyn, Jpn. J. Appl. Phys. 52, 08JA01 (2013)

    Google Scholar 

  8. W. Jiang, D. Ehrentraut, J. Cook, D.S. Kamber, R.T. Pakalapati, M.P. D’Evelyn, Phys. Status Solidi B 252, 1069 (2015)

    Google Scholar 

  9. T. Malkowski, J.S. Speck, S.P. DenBaars, S. Nakamura, J. Cryst. Growth 499, 85 (2018)

    Article  CAS  Google Scholar 

  10. R. Dwilinski, A. Wysmolek, J. Baranowski, M. Kaminska, R. Doradzinski, J. Garczynski, L. Sierzputowski, Acta Phys. Pol. 88(5), 833 (1995)

    Article  CAS  Google Scholar 

  11. D.R. Ketchum, J.W. Kolis, J. Cryst. Growth 222, 431 (2001)

    Article  CAS  Google Scholar 

  12. A. Yoshikawa, E. Oshima, T. Fukuda, H. Tsuji, K. Oshima, J. Cryst. Growth 260, 67 (2004)

    Article  CAS  Google Scholar 

  13. B. Wang, M.J. Callahan, Cryst. Growth Des. 6, 1227 (2006)

    Article  CAS  Google Scholar 

  14. T. Hashimoto, K. Fujito, B.A. Haskell, P.T. Fini, J.S. Speck, S. Nakamura, J. Cryst. Growth 275, e525 (2005)

    Article  CAS  Google Scholar 

  15. T. Hashimoto, K. Fujito, R. Sharma, E.R. Letts, P.T. Fini, J.S. Speck, S. Nakamura, J. Cryst. Growth 291, 100 (2006)

    Article  CAS  Google Scholar 

  16. M.P. D’Evelyn, H.C. Hong, D.-S. Park, H. Lu, E. Kaminsky, R.R. Melkote, P. Perlin, M. Leszczynski, S. Porowski, R.J. Molnar, J. Cryst. Growth 300, 11 (2007)

    Article  CAS  Google Scholar 

  17. D. Bliss, B. Wang, M. Suscavage, R. Lancto, S. Swider, W. Eikenberry, C. Lynch, J. Cryst. Growth 312, 1069 (2010)

    Article  CAS  Google Scholar 

  18. T. Hashimoto, E. Letts, M. Ikari, Y. Nojima, J. Cryst. Growth 312, 2503 (2010)

    Article  CAS  Google Scholar 

  19. R. Dwilinski, R. Doradzinski, J. Garczynski, L. Sierzputowski, R. Kucharski, M. Zajac, M. Rudzinski, R. Kudrawiec, J. Serafinczuk, W. Strupinski, J. Cryst. Growth 312, 2499 (2010)

    Article  CAS  Google Scholar 

  20. K. Fujii, G. Fujimoto, T. Goto, T. Yao, Y. Kagamitani, N. Hoshino, D. Ehrentraut, T. Fukuda, J. Cryst. Growth 310, 896–899 (2008)

    Article  CAS  Google Scholar 

  21. Y. Kagamitani, D. Ehrentraut, A. Yoshikawa, N. Hoshino, T. Fukuda, H. Tsuji, K. Oshima, Jpn. J. Appl. Phys. 45, 4018 (2006)

    Article  CAS  Google Scholar 

  22. T. Hashimoto, S. Hoff, D. Key, K. Male, M. Michaels, J. Cryst. Growth 403, 3 (2014)

    Article  CAS  Google Scholar 

  23. E. Letts, D. Key, T. Hashimoto, J. Cryst. Growth 456, 27 (2016)

    Article  CAS  Google Scholar 

  24. S. Pimputkar, S. Kawabata, J.S. Speck, S. Nakamura, J. Cryst. Growth 403, 7 (2014)

    Article  CAS  Google Scholar 

  25. S. Pimputkar, J.S. Speck, S. Nakamura, J. Cryst. Growth 456, 15 (2016)

    Article  CAS  Google Scholar 

  26. T.F. Malkowski, S. Pimputkar, J.S. Speck, S.P. DenBaars, S. Nakamura, J. Cryst. Growth 456, 21 (2016)

    Article  CAS  Google Scholar 

  27. J. Hertrampf, N.S.A. Alt, E. Schlücker, M. Knetzger, E. Meissner, R. Niewa, J. Cryst. Growth 456, 2 (2016)

    Article  CAS  Google Scholar 

  28. D. Tomida, Y. Kagamitani, Q. Bao, K. Hazu, H. Sawayama, S.F. Chichibu, C. Yokoyama, T. Fukuda, T. Ishiguro, J. Cryst. Growth 353, 59 (2012)

    Article  CAS  Google Scholar 

  29. Q. Bao, M. Saito, K. Hazu, Y. Kagamitani, K. Kurimoto, D. Tomida, K. Qiao, T. Ishiguro, Ch. Yokoyama, S.F. Chichibu, J. Cryst. Growth 404, 168 (2014)

    Article  CAS  Google Scholar 

  30. K. Yoshida, K. Aoki, T. Fukuda, J. Cryst. Growth 393, 93 (2014)

    Article  CAS  Google Scholar 

  31. M. Saito, D.S. Kamber, T.J. Baker, K. Fujito, S.P. DenBaars, J.S. Speck, S. Nakamura, Appl. Phys. Express 1, 121103 (2008)

    Article  CAS  Google Scholar 

  32. R.G. Wyckoff, Crystal Structures, vol. 1 (Wiley, New York, 1995), pp. 111–113

    Google Scholar 

  33. H. Schulz, K.H. Thiemann, Solid State Commun. 23, 815 (1977)

    Article  CAS  Google Scholar 

  34. G.A. Jeffrey, G.S. Parry, R.L. Mozzi, J. Chem. Phys. 25, 1024 (1956)

    Article  CAS  Google Scholar 

  35. N.A. Mahadik, S.B. Qadri, M.V. Rao, Thin Solid Films 516, 233 (2007)

    Article  CAS  Google Scholar 

  36. M. Leszczynski, I. Grzegory, H. Teisseyre, T. Suski, M. Bockowski, J. Jun, J.M. Baranowski, S. Porowski, J.M. Domagala, Appl. Phys. Lett. 69, 73 (1996)

    Article  CAS  Google Scholar 

  37. N.A. Mahadik, S.B. Qadri, J.A. Freitas Jr., Cryst. Growth Des. 15, 291 (2014)

    Article  CAS  Google Scholar 

  38. L. Bergman, M. Dutta, R.J. Nemanich, Raman Scattering in Materials Science, Springer Series in Materials Science, vol. 42, ed. by W.H. Weber, R. Merlin (2000), p. 273

    Google Scholar 

  39. D. Gogova, P.P. Petrov, M. Buegler, M.R. Wagner, C. Nestiel, G. Callsen, M. Schmidbauert, R. Kucharski, M. Zajac, R. Dwilinski, M.R. Philips, A. Hoffmann, R. Fornari, J. Appl. Phys. 113, 203513 (2013)

    Article  CAS  Google Scholar 

  40. P. Perlin, J. Camassel, W. Knap, T. Talercio, J.C. Chervin, T. Suski, I. Grzegory, S. Porowski, Appl. Phys. Lett. 67, 2524 (1995)

    Article  CAS  Google Scholar 

  41. H.-Y. Kim, J.A. Freitas Jr., J. Kim, Electrochem. Solid State Lett. 14, H5 (2011)

    Article  CAS  Google Scholar 

  42. J.A. Freitas Jr., J.C. Culbertson, N.A. Mahadik, M.J. Tadjer, S. Wu, B. Raghothamachar, M. Dudley, T. Sochacki, M. Bockowski, J. Cryst. Growth 500, 104 (2018)

    Article  CAS  Google Scholar 

  43. M. Dudley, Encyclopedia of Advanced Materials, vol. 4 (Pergamon Press, NY, 1994), p. 2950

    Google Scholar 

  44. M.J. Hordon, B.L. Averbach, Acta Metall. 9, 231 (1961)

    Google Scholar 

  45. P. Gay, P.B. Hirsch, A. Kelly, Acta Metall. 1, 315 (1953)

    Article  CAS  Google Scholar 

  46. R. Kucharski, K. Grabianska, A. Gwardys-Bak, M. Zajac, A. Puchalski, J.Z. Domagala, T. Sochacki, M. Bockowski, Presented at International Workshop on Nitride Semiconductors, Kanazawa, Japan, 11–16 Nov 2018

    Google Scholar 

  47. X. Bilaj, Dudley et al., to be published

    Google Scholar 

  48. S. Sintonen, M. Rudzinski, S. Suihkonen, H. Jussila, M. Knetzger, E. Meissner, A. Danilewsky, T.O. Tuomi, H. Lipsanen, J. Appl. Phys. 116, 083504 (2014)

    Google Scholar 

  49. T. Hashimoto, F. Wu, M. Saito, K. Fujitu, J.S. Speck, S. Nakamura, J. Cryst. Growth 310, 876 (2008)

    Article  CAS  Google Scholar 

  50. J. Bai, M. Dudley, B. Raghothamachar, P. Gouma, B.J. Shromme, L. Chen, P.J. Hartileb, M. Michaels, J.W. Kolis, Appl. Phys. Lett. 84, 17 (2004)

    Google Scholar 

  51. K. Horibuchi, S. Yamaguchi, Y. Kimoto, K. Nishikawa, T. Kachi, Semicond. Sci. Technol. 31, 034002 (2016)

    Article  CAS  Google Scholar 

  52. L.J. Cheng, C.K. Yet, Sol. State. Commun. 12, 529 (1973)

    Article  CAS  Google Scholar 

  53. P.U. Arifov, N.Y. Arutyunov, A.Z. Iliyasov, Sov. Phys. Semicond. 11, 907 (1977)

    Google Scholar 

  54. F. Tuomisto, I. Makkonen, Rev. Mod. Phys. 85, 1583 (2013)

    Article  CAS  Google Scholar 

  55. K. Saarinen, T. Laine, S. Kuisma, J. Nissila, P. Hautojarvi, L. Dobrzynski, J.M. Baranowski, K. Pakula, R. Stepniewski, M. Wojdak, A. Wysmolek, T. Suski, M. Leszczynski, I. Grzegory, S. Porowski, Phys. Rev. Lett. 79, 3030 (1997)

    Article  CAS  Google Scholar 

  56. K. Saarinen, in III-nitrides Semiconductors: Electrical, Structural and Defects Properties, ed. by O. Manasreh (Elsevier, Amsterdam, 2000), pp. 109–149

    Google Scholar 

  57. F. Tuomisto, J.-M. Mäki, M. Zajac, J. Cryst. Growth 312, 2620 (2010)

    Article  CAS  Google Scholar 

  58. F. Tuomisto, T. Kuittinen, M. Zajac, R. Doradzinski, D. Wasik, J. Cryst. Growth 403, 114 (2014)

    Article  CAS  Google Scholar 

  59. C. Van de Walle, Phys. Rev. B 56, R10020 (1997)

    Article  Google Scholar 

  60. S. Suihkonen, S. Pimputkar, J.S. Speck, S. Nakamura, Appl. Phys. Lett. 108, 202105 (2016)

    Article  CAS  Google Scholar 

  61. A. Uedono, Y. Tsukada, Y. Mikawa, T. Mochizuki, H. Fujisawa, H. Ikeda, K. Kurihara, S. Terada, S. Ishibashi, S.F. Chichibu, J. Cryst. Growth 448, 117 (2016)

    Article  CAS  Google Scholar 

  62. W. Jiang, M. Nolan, D. Ehrentraut, M.P. D’Evelyn, Appl. Phys. Express 10, 075506 (2017)

    Article  Google Scholar 

  63. J.L. Lyons, A. Alkauskas, A. Janotti, C.G. Van de Walle, Phys. Status Solid 252, 900 (2015)

    Article  CAS  Google Scholar 

  64. C. Persson, A.F. da Silva, Optoelectronic Devices: III-Nitrides, ed. by M. Razeghi, M. Henini (Elsevier, Amsterdam, 2004), pp. 518–559

    Google Scholar 

  65. Authors and Editors of the LB Volumes III/17A-22A-41A1b, Gallium nitride (GaN), effective masses, g-factors, deformation potentials, in Group IV Elements, IV-IV and III-V Compounds. Part B—Electronic, Transport, Optical and Other Properties. Landolt-Börnstein—Group III Condensed Matter (Numerical Data and Functional Relationships in Science and Technology), vol. 41A1b, ed. by O. Madelung, U. Rössler, M. Schulz (Springer, Berlin, Heidelberg)

    Google Scholar 

  66. J. Neugebauer, C.G. Van de Walle, Phys. Rev. B 50, 8067 (1994)

    Article  CAS  Google Scholar 

  67. J. Neugebauer, C.G. Van de Walle, Appl. Phys. Lett. 68, 1829 (1996)

    Article  CAS  Google Scholar 

  68. J. Neugebauer, C.G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996)

    Article  Google Scholar 

  69. P. Boguslawski, E.L. Briggs, J. Bernholc, Phys. Rev. B 51, 17255 (1995)

    Article  CAS  Google Scholar 

  70. T. Mattila, R.M. Nieminen, Phys. Rev. B 55, 9571 (1997)

    Article  CAS  Google Scholar 

  71. I. Gorczyca, A. Svane, N.E. Christensen, Phys. Rev. B 60, 8147 (1999)

    Article  CAS  Google Scholar 

  72. S. Limpijumnong, C.G. Van de Walle, Phys. Rev. B 69, 035207 (2004)

    Article  CAS  Google Scholar 

  73. H. Wan, A.-B. Chen, J. Appl. Phys. 87, 7859 (2000)

    Article  Google Scholar 

  74. F. Mireles, S.E. Ulloa, Phys. Rev. B 58, 3879 (1998)

    Article  CAS  Google Scholar 

  75. W. Gotz, N.M. Johnson, J. Walker, D.P. Bour, R.A. Street, Appl. Phys. Lett. 68, 667 (1996)

    Article  CAS  Google Scholar 

  76. J.A. Freitas Jr., W.J. Moore, B.V. Shanabrook, G.C.B. Braga, S.K. Lee, S.S. Park, J.Y. Han, Phys. Rev. B. 66(2002), 233311 (2002)

    Article  CAS  Google Scholar 

  77. E. Burstein, Phys. Rev. 93, 632 (1954)

    Article  CAS  Google Scholar 

  78. R. Doradzinski, R. Dwilinski, J. Garczynski, L.P. Sierzputowski, Y. Kanbara, in Technology of Gallium Nitride Crystal Growth, ed. by D. Ehrentraut, E. Meissener, M. Bockowski (Springer, Cham, 2010), pp. 137–159, Chapter 7

    Google Scholar 

  79. D.O. Demchenko, I.C. Diallo, M.A. Rashchikov, Phys. Rev. Lett. 110, 087404 (2013)

    Article  CAS  Google Scholar 

  80. J.A. Freitas Jr., B.N. Feigelson, T.J. Anderson, Appl. Phys. Express 6, 111001 (2013)

    Article  CAS  Google Scholar 

  81. M. Ilegems, R. Dingle, R.A. Logan, J. Appl. Phys. 43, 3797 (1972)

    Google Scholar 

  82. M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Umemo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka, M. Tanaka, O. Oda, J. Cryst. Growth 244, 6 (2002)

    Article  CAS  Google Scholar 

  83. S. Addachi, Properties of Group-IV, III-V and II-VI Semiconductors (Wiley, Chichester, 2005)

    Book  Google Scholar 

  84. D. Ehrentraut, T. Fukuda, Proc. IEEE 98, 1316 (2010)

    Google Scholar 

  85. W. Jiang, D. Ehrentraut, B.C. Downey, D.S. Kamber, R.T. Pakalapati, H.D. Yoo, M.P. D’Evelyn, J. Cryst. Growth 403, 18 (2014)

    Article  CAS  Google Scholar 

  86. S. Nakamura, T. Mukai, M. Senoh, N. Iwasa, Jpn. J. Appl. Phys. 31, L139 (1991)

    Article  Google Scholar 

  87. D.I. Florescu, V.M. Asnin, F.H. Pollak, R.J. Molnar, C.E.C. Wood, J. Appl. Phys. 88, 3295 (2000)

    Article  CAS  Google Scholar 

  88. G.A. Slack, L.J. Schowalter, J.A. Freitas Jr., J. Cryst. Growth 246, 287 (2002)

    Article  CAS  Google Scholar 

  89. A. Jezowski, B.A. Denilchenko, M. Bockowski, I. Grzegory, S. Krukowski, T. Suski, T. Paszkiewicz, Solid State Commun. 128, 69 (2003)

    Article  CAS  Google Scholar 

  90. D.I. Florescu, V.M. Asnin, F.H. Pollak, A.M. Jones, M.J. Schurman, I. Fergunson, Appl. Phys. Lett. 77, 1464 (2000)

    Google Scholar 

  91. J. Zou, D. Kotchetkov, A.A. Baladin, D.I. Florescu, F.H. Pollack, J. Appl. Phys. 92, 2534 (2002)

    Article  CAS  Google Scholar 

  92. W. Liu, A.A. Baladin, C. Lee, H. Lee, Phys. Status Solidi A 179, R135 (2005)

    Article  CAS  Google Scholar 

  93. D.I. Florescu, F.H. Pollak, T. Paskova, B. Monemar, Compound Semicond. 7, 62 (2001)

    Google Scholar 

  94. R.B. Simon, J. Anaya, M. Kubal, Appl. Phys. Lett. 105, 202105 (2014)

    Article  CAS  Google Scholar 

  95. C. Mion, J.F. Muth, E.A. Preble, D. Hanser, Appl. Phys. Lett. 89, 092123 (2006)

    Article  CAS  Google Scholar 

  96. R. Rounds, B. Sarkar, T. Sochacki, M. Bockowski, M. Imanishi, Y. Mori, R. Collazo, Z. Sitar, J. Appl. Phys. 124, 105106 (2018)

    Article  CAS  Google Scholar 

  97. A. Witek, Diamond Relat. Mater. 7, 962 (1998)

    Article  CAS  Google Scholar 

  98. Y. Oshima, T. Suzuki, T. Eri, Y. Kawaguchi, K. Watanabe, M. Shibata, T. Mishima, J. Appl. Phys. 98, 103509 (2005)

    Article  CAS  Google Scholar 

  99. I. Grzegory, J. Jun, M. Bockowski, M. Wrobleski, B. Lucznik, S. Porowski, J. Phys. Chem. Solids 56, 639 (1995)

    Article  CAS  Google Scholar 

  100. D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman, Appl. Phys. Lett. 73, 2018 (1998). Erratum, Appl. Phys. Lett. 75, 1646 (1999)

    Google Scholar 

  101. M. Amilusik, T. Sochacki, B. Lucznik, M. Bockowski, B. Sadovyi, A. Presz, I. Dziecielewski, I. Grzegory, J. Cryst. Growth 380, 99 (2013)

    Article  CAS  Google Scholar 

  102. T. Sochacki, M. Amilusik, B. Lucznik, M. Fijakowski, J.L. Weyher, B. Sadovyi, G. Kamler, G. Nowak, E. Litwin-Staszewska, A. Khachapuridze, I. Grzegory, R. Kucharski, M. Zajac, R. Doradzinski, M. Bockowski, Jpn. J. Appl. Phys. 53, 05FA04 (2014)

    Google Scholar 

  103. T. Sochacki, Z. Bryan, M. Amilusik, R. Collazo, B. Lucznik, J.L. Weyher, G. Nowak, B. Sadovyi, R. Kucharski, M. Zajac, R. Doradzinski, R. Dwilinski, I. Grzegory, M. Bockowski, Z. Sitar, Appl. Phys. Express 6, 075504 (2013)

    Article  CAS  Google Scholar 

  104. H. Fujikura, T. Yoshida, M. Shibata, Y. Otoki, Proceedings of SPIE, vol. 10104, 1010403-1 (2017)

    Google Scholar 

  105. P. Perlin, L. Marona, K. Holc, P. Wisniewski, T. Suski, M. Leszczynski, R. Czarnecki, S. Najda, M. Zajac, R. Kucharski, Appl. Phys. Express 4, 062103 (2011)

    Article  CAS  Google Scholar 

  106. P. Perlin, S. Stanczyk, A. Kafar, A. Bojarska, L. Marona, R. Czarnecki, G. Targowski, G. Muziol, H. Turski, E. Grzanka, S. Grzanka, S. Najda, P. Wisniewski, T. Czyszanowski, M. Leszczynski, C. Skierbiszewski, M. Zajac, R. Kucharski, T. Suski, Photonics Lett. Pol. 6, 32 (2014)

    Google Scholar 

  107. Y. Hatakeyama, K. Nomoto, N. Kaneda, T. Kawano, T. Mishima, T. Nakamura, IEEE Electron Device Lett. 32, 1674 (2011)

    Article  CAS  Google Scholar 

  108. I.C. Kizilyalli, A.P. Edward, H. Nie, D. Bour, T. Prunty, D. Disney, IEEE Electron Device Lett. 35, 247 (2014)

    Article  CAS  Google Scholar 

  109. B.S. Kang, F. Ren, Y. Irokawa, K.W. Baik, S.J. Pearton, C.-C. Pan, G.-T. Chen, J.-I. Chyi, H.-J. Ko, H.-Y. Lee, J. Vac. Sci. Technol. B: Micronelectron. Process. Phenom. 22(2), 710 (2004)

    Google Scholar 

Download references

Acknowledgements

This research was supported by the Office of Naval Research.

Author information

Authors and Affiliations

  1. Naval Research Laboratory, Washington, DC, 20375, USA

    Jaime A. Freitas Jr.

  2. Institute of High Pressure Physics, Polish Academy of Sciences, 01-142, Warsaw, Poland

    Marcin Zając

Authors
  1. Jaime A. Freitas Jr.
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Marcin Zając
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Jaime A. Freitas Jr. .

Editor information

Editors and Affiliations

  1. Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany

    Elke Meissner

  2. Institute of Inorganic Chemistry, University of Stuttgart, Stuttgart, Germany

    Rainer Niewa

Rights and permissions

Reprints and permissions

Copyright information

© 2021 This is a U.S. government work and not under copyright protection in the U.S.; foreign copyright protection may apply

About this chapter

Check for updates. Verify currency and authenticity via CrossMark

Cite this chapter

Freitas, J.A., Zając, M. (2021). Properties of Ammonothermal Crystals. In: Meissner, E., Niewa, R. (eds) Ammonothermal Synthesis and Crystal Growth of Nitrides. Springer Series in Materials Science, vol 304. Springer, Cham. https://doi.org/10.1007/978-3-030-56305-9_16

Download citation

Publish with us

Policies and ethics

Search

Navigation