Abstract
The TFET emerges as one of the promising alternatives to CMOS to design ultra-low power memories due to very low leakage current. In literature, reports on optimizing TFET circuits are mainly focused on SRAM designs with the aim to reduce leakage.
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Gupta, N., Makosiej, A., Amara, A., Vladimirescu, A., Anghel, C. (2021). SRAMs. In: TFET Integrated Circuits. Springer, Cham. https://doi.org/10.1007/978-3-030-55119-3_3
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DOI: https://doi.org/10.1007/978-3-030-55119-3_3
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