Abstract
TFETs are p-i-n gated junctions that operate in reverse regime. Figure 2.1 shows a conceptual TFET structure compared to a CMOS transistor. For an n-type (NTFET), p+ (n+) doping is used for the source (drain) while for a p-type (PTFET) n+ (p+) doping is used for the source (drain), the doping being reversed between the source and the drain as opposed to a MOSFET where drain and source have identical doping.
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Gupta, N., Makosiej, A., Amara, A., Vladimirescu, A., Anghel, C. (2021). State-of-the-Art TFET Devices. In: TFET Integrated Circuits. Springer, Cham. https://doi.org/10.1007/978-3-030-55119-3_2
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DOI: https://doi.org/10.1007/978-3-030-55119-3_2
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