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Structural Properties of Heterostructures

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Epitaxy of Semiconductors

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Abstract

Structural properties of epitaxial layers are pointed out in this chapter with some emphasis on zincblende and wurtzite crystals. After a brief review on perfect, polytype, and mixed bulk crystals we focus on elastic properties of pseudomorphic strained-layer structures. Then the concept of critical layer thickness is introduced, and dislocations relieving the strain in epitaxial layers are presented. X-ray diffraction—the standard tool for structural characterization—is outlined at the end of the chapter.

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  1. Institute of Solid State Physics, Technische Universität Berlin, Berlin, Germany

    Udo W. Pohl

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Pohl, U.W. (2020). Structural Properties of Heterostructures. In: Epitaxy of Semiconductors. Graduate Texts in Physics. Springer, Cham. https://doi.org/10.1007/978-3-030-43869-2_2

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