Abstract
This introductory chapter provides a brief survey on the development of epitaxial growth techniques and points out tasks for the epitaxy of device structures. Starting from early studies of alkali-halide overgrowth in the beginning of the 20th century, basic concepts for lattice match between layer and substrate were developed in the late 1920s, followed by the theory of misfit dislocations introduced about 1950. Major progress in epitaxy was achieved by technical improvements of the growth techniques, namely liquid phase epitaxy in the early, and molecular beam epitaxy and metalorganic vapor phase epitaxy in the late 1960s. Current tasks for epitaxial growth are often motivated by needs for the fabrication of advanced devices, aiming to control carriers and photons.
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Pohl, U.W. (2020). Introduction. In: Epitaxy of Semiconductors. Graduate Texts in Physics. Springer, Cham. https://doi.org/10.1007/978-3-030-43869-2_1
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DOI: https://doi.org/10.1007/978-3-030-43869-2_1
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