Abstract
Si is widely used in most of the electric devices; therefore, our world cannot be without Si. To improve the performance of Si devices using electron only as carriers, it is required to reduce the size of the device below 10 nm. In addition to the electrons, it is expected to improve further by introducing the photons [1]. However, Si is not good material for photonic device because Si has low efficiency to excite the carrier by the photo-excitation of propagating FF. This is due to its indirect bandgap, in which Si has different wave vector between the \(\Gamma \) point and the X point [2, 3] (refer to Fig. 2.8a). Therefore, phonon assistance is required to compensate for the wave vector difference.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
M. Paniccia, Silicon photonics is this the future? in Nature Photonics Conference (2007)
H. Lu, G. Chen, Analysis of optical absorption in silicon nanowire arrays for photovoltaic applications. Nano Lett. 7(11), 3249–3252 (2007)
J. Noffsinger, E. Kioupakis, C.G. Van de Walle, S.G. Louie, M.L. Cohen, Phonon-assisted optical absorption in silicon from first principles. Phys. Rev. Lett. 108, 167402 (2012)
D.M. Schaadt, B. Feng, E.T. Yu, Enhanced semiconductor optical absorption via surface plasmon excitation in metal nanoparticles. Appl. Phys. Lett. 86(6), 063106 (2005)
H.A. Atwater, A. Polman, Plasmonics for improved photovoltaic devices. Nat. Mater. 9, 205–213 (2010)
I. Goykhman, B. Desiatov, J. Khurgin, J. Shappir, U. Levy, Locally oxidized silicon surface-plasmon Schottky detector for telecom regime. Nano Lett. 11(6), 2219–2224 (2011)
M.D. Kelzenberg, S.W. Boettcher, J.A. Petykiewicz, D.B. Turner-Evans, M.C. Putnam, E.L. Warren, J.M. Spurgeon, R.M. Briggs, N.S. Lewis, H.A. Atwater, Enhanced absorption and carrier collection in Si wire arrays for photovoltaic applications. Nat. Mater. 9, 239–244 (2010)
T. Yatsui, M. Yamaguchi, K. Nobusada, Nano-scale chemical reactions based on non-uniform optical near-fields and their applications. Prog. Quantum Electron. 55, 166–194 (2017)
J. Jung, M.L. Trolle, K. Pedersen, T.G. Pedersen, Indirect near-field absorption mediated by localized surface plasmons. Phys. Rev. B 84, 165447 (2011)
M. Yamaguchi, K. Nobusada, Indirect interband transition induced by optical near fields with large wave numbers. Phys. Rev. B 93, 195111 (2016)
T. Yatsui, S. Okada, T. Takemori, T.S.K. Saichi, T. Ogamoto, S. Chiashi, S. Maruyama, M. Noda, K. Yabana, K. Iida, K. Nobusada, Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation. Commun. Phys. 2, 62 (2019)
T. Yatsui, Recent improvement of silicon absorption in opto-electric devices. Opto-Electron. Adv. 2(10), 190023 (2019)
J.C. Irvin, Resistivity of bulk silicon and of diffused layers in silicon. Bell Syst. Tech. J. 41(2), 387–410 (1962)
S. Link, M.A. El-Sayed, Spectral properties and relaxation dynamics of surface plasmon electronic oscillations in gold and silver nanodots and nanorods. J. Phys. Chem. B 103(40), 8410–8426 (1999)
V. Myroshnychenko, J. Rodriguez-Fernández, I. Pastoriza-Santos, A.M. Funston, C. Novo, P. Mulvaney, L.M. Liz-Marzán, F.J.G. de Abajo, Modelling the optical response of gold nanoparticles. Chem. Soc. Rev. 37, 1792–1805 (2008)
L. Rayleigh F.R.S., XXXIV. On the transmission of light through an atmosphere containing small particles in suspension, and on the origin of the blue of the sky. Lond. Edinb. Dublin Philos. Mag. J. Sci. 47(287), 375–384 (1899)
A.T. Young, Rayleigh scattering. Phys. Today 35(1), 42–48 (1982)
A. Taflove, S.C. Hagness, Computational Electrodynamics: The Finite-Difference Time-Domain Method (Artech House, Boston, 2005)
M.M. Wind, J. Vlieger, D. Bedeaux, The polarizability of a truncated sphere on a substrate I. Phys. A: Stat. Mech. Appl. 141(1), 33–57 (1987)
K. Nakayama, K. Tanabe, H.A. Atwater, Plasmonic nanoparticle enhanced light absorption in GaAs solar cells. Appl. Phys. Lett. 93(12), 121904 (2008)
K.R. Catchpole, A. Polman, Design principles for particle plasmon enhanced solar cells. Appl. Phys. Lett. 93(19), 191113 (2008)
S. Pillai, K.R. Catchpole, T. Trupke, M.A. Green, Surface plasmon enhanced silicon solar cells. J. Appl. Phys. 101(9), 093105 (2007)
H.R. Stuart, D.G. Hall, Absorption enhancement in silicon-on-insulator waveguides using metal island films. Appl. Phys. Lett. 69(16), 2327–2329 (1996)
J.I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971)
J.J. Loferski, Theoretical considerations governing the choice of the optimum semiconductor for photovoltaic solar energy conversion. J. Appl. Phys. 27(7), 777–784 (1956)
J. Wagner, J.A. del Alamo, Band-gap narrowing in heavily doped silicon: a comparison of optical and electrical data. J. Appl. Phys. 63(2), 425–429 (1988)
S. Richard, F. Aniel, G. Fishman, Energy-band structure of Ge, Si, and GaAs: a thirty-band \(\mathbf{k}\mathbf{\cdot }\mathbf{p}\) method. Phys. Rev. B 70, 235204 (2004)
C.F. Bohren, D.R. Huffman, Absorption and Scattering of Light by Small Particles (Wiley, New York, 1998)
J.D. Jackson, Classical Electrodynamics (Wiley, New York, 1962)
S.A. Maier, Plasmonics: Fundamentals and Applications (Springer, Berlin, 2007)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2020 Springer Nature Switzerland AG
About this chapter
Cite this chapter
Yatsui, T. (2020). Wave Vector Excitation. In: Nanophotonic Chemical Reactions. Nano-Optics and Nanophotonics. Springer, Cham. https://doi.org/10.1007/978-3-030-42843-3_5
Download citation
DOI: https://doi.org/10.1007/978-3-030-42843-3_5
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-030-42841-9
Online ISBN: 978-3-030-42843-3
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)