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Noise in Nanoscale Semiconductor Devices pp 285–333Cite as

Random Telegraph Noise Under Switching Operation

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Abstract

This chapter deals with random telegraph noise (RTN) under switching operation. We measured and modeled RTN by using ring oscillator-based (RO-based) test chips. They were fabricated in three different processes of 65 nm bulk, 65 nm FDSOI, and 40 nm bulk. Measurements are performed for ROs of different topology, gate width, and stage number under different supply voltage, substrate bias, and temperature. Measurement results reveal valuable insights into the impact of RTN on the reliability of logic circuits. We have also shown the variability change according to gate width, stage number, and supply voltage. We presented design methodology of a test structure so as to extract RTN parameters, which is used to develop a Verilog-AMS model.

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Authors and Affiliations

  1. Department of Electronics, Graduate School of Science and Technology, Kyoto Institute of Technology, Kyoto, Japan

    Kazutoshi Kobayashi

  2. Department of Electrical Engineering, Graduate School of Engineering, Kyoto University, Kyoto, Japan

    Mahfuzul Islam

  3. VLSI Design and Education Center (VDEC), The University of Tokyo, Tokyo, Japan

    Takashi Matsumoto

  4. Department of Electrical Engineering, Faculty of Science and Technology, Tokyo University of Science, Noda, Japan

    Ryo Kishida

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  1. Kazutoshi Kobayashi
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  2. Mahfuzul Islam
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  4. Ryo Kishida
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Correspondence to Kazutoshi Kobayashi .

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Editors and Affiliations

  1. Institute for Microelectronics, Technische Universität Wien, Wien, Austria

    Tibor Grasser

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Kobayashi, K., Islam, M., Matsumoto, T., Kishida, R. (2020). Random Telegraph Noise Under Switching Operation. In: Grasser, T. (eds) Noise in Nanoscale Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-030-37500-3_9

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