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Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals

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Noise in Nanoscale Semiconductor Devices

Abstract

In this chapter, we will discuss the characterization of oxide defects utilizing their effect on noise signals recorded on scaled MOS transistors. The main focus is put on the analysis of noise signals, especially on the analysis of the so-called random telegraph noise (RTN), which is caused by single microscopic defects in the MOS transistor. In detail, RTN signals evolve as discrete changes of the current between two distinct levels when static bias conditions are applied to the transistor. From these signals, characteristic charge transition times of single defects can be extracted. To extend the measurement window, the related time domain defect spectroscopy (TDDS) can be used. The idea behind TDDS is similar to RTN, with the difference that the biases are switched during the characterization to cover the entire operating regime of the transistor. Afterwards the evaluation of the measurement data not only using histograms and time lag plots but also using more advanced methods based on Markov chains and the Canny edge detection algorithm is discussed. Finally, the physics-based four-state defect model is briefly introduced. In combination with density function theory simulations, the four-state defect model provides the link between experimental data and possible atomistic defect structures.

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Acknowledgements

This work was supported in part by the Austrian Science Fund (FWF) under Project P 26382-N30, Project P 23958-N24, and Project I2606-N30, in part by the European Union FP7 Project ATHENIS 3-D under Grant 619246, and in part by the Austrian Research Promotion Agency (FFG, Take-Off Program) under Project 861022 and Project 867414.

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Authors and Affiliations

  1. Christian Doppler Laboratory for Single-Defect Spectroscopy in Semiconductor Devices at the Institute for Microelectronics, Vienna, Austria

    Bernhard Stampfer & Michael Waltl

  2. Institute for Microelectronics, Vienna, Austria

    Alexander Grill

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  1. Bernhard Stampfer
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  2. Alexander Grill
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Correspondence to Bernhard Stampfer .

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  1. Institute for Microelectronics, Technische Universität Wien, Wien, Austria

    Tibor Grasser

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Stampfer, B., Grill, A., Waltl, M. (2020). Advanced Electrical Characterization of Single Oxide Defects Utilizing Noise Signals. In: Grasser, T. (eds) Noise in Nanoscale Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-030-37500-3_7

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