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Noise in Nanoscale Semiconductor Devices pp 1–31Cite as

Origins of 1/f Noise in Electronic Materials and Devices: A Historical Perspective

Abstract

From its discovery in 1925 by Johnson until the late 1960s, it was generally agreed that low-frequency excess (1/f) noise in electronic materials and devices is caused primarily by defects and impurities. The 1/f noise of semiconductor devices was considered to be a surface effect, ascribed by McWhorter to fluctuations in carrier number caused by surface charge trapping. After much controversy, the noise of metal films was shown to be due to mobility fluctuations caused by carrier-defect scattering. For MOSFETs and most other electronic devices, overwhelming evidence strongly supports carrier number fluctuations due to trapping effects as the origin of the observed noise. The model of Dutta and Horn allows the estimation of effective defect-energy distributions from comparative measurements of the temperature and frequency dependence of the noise. Examples are presented for MOSFETs (including those based on SiC and two-dimensional materials) that show the particular importance of O vacancy-related defects and hydrogen to the observed noise, and the importance of complementary experimental techniques and density-functional theory calculations in assisting in the identification of the defects that are primarily responsible. The low-frequency noise of GaN-based HEMTs is also discussed.

Keywords

  • 1/f noise
  • Models
  • Number fluctuations
  • Mobility fluctuations
  • Defects
  • MOS transistors
  • Border traps
  • Radiation effects
  • Reliability
  • Semiconductors
  • Metals
  • GaN-based HEMTs
  • SiC MOSFETs
  • Two-dimensional materials

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Acknowledgments

Several of the discussions in this chapter are abridged from a recent review [48]. The interested reader is directed to this and other cited sources for additional details. The author thanks D. E. Beutler, J. Chen, C. Claeys, R. A. B. Devine, P. V. Dressendorfer, G. X. Duan, P. Dutta, S. A. Francis, T. Grasser, P. H. Handel, F. N. Hooge, P. M. Horn, N. Giordano, R. Jiang, S. Koester, Sh. M. Kogan, C. D. Liang, Z. Y. Lu, J. T. Masden, P. J. McWhorter, S. L. Miller, C. J. Nicklaw, S. T. Pantelides, J. Pelz, Y. Puzyrev, R. A. Reber, Jr., L. C. Riewe, T. Roy, J. H. Scofield, R. D. Schrimpf, M. R. Shaneyfelt, J. R. Schwank, E. Simoen, X. Shen, W. C. Skocpol, J. S. Speck, C. Surya, A. Tremblay, M. J. Uren, L. K. J. Vandamme, R. F. Voss, P. Wang, W. L. Warren, M. B. Weissman, P. S. Winokur, H. D. Xiong, C. X. Zhang, and E. X. Zhang for experimental assistance and/or stimulating discussions.

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    Tibor Grasser

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Fleetwood, D.M. (2020). Origins of 1/f Noise in Electronic Materials and Devices: A Historical Perspective. In: Grasser, T. (eds) Noise in Nanoscale Semiconductor Devices. Springer, Cham. https://doi.org/10.1007/978-3-030-37500-3_1

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