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Plasma-Assisted Molecular Beam Epitaxy 2

Fundamentals of Suboxide-Related Growth Kinetics, Thermodynamics, Catalysis, Polymorphs, and Faceting

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

Abstract

This chapter sheds light on various fundamental aspects of the O plasma-assisted molecular beam epitaxy of Ga2O3. It discusses the volatile suboxide-related growth kinetics of Ga2O3 explaining the observed growth rate behavior as function of all growth parameters. The binary growth kinetics of Ga2O3 is then compared to that of its related oxides In2O3 and SnO2. During the ternary growth of (InxGa1-x)2O3, thermodynamic aspects based on different metal-oxygen bond strengths become important, which will be shown to govern the Ga- versus In-incorporation into the (InxGa1-x)2O3 thin film. More importantly, we describe how the collaborative effect of the different growth kinetics and thermodynamics of the binary oxides can lead to a strong growth rate enhancement of Ga2O3 by metal-exchange catalysis (MEXCAT) using In2O3 or SnO2 as catalyst. A brief overview of the polymorphs of Ga2O3 stabilized by different substrates is given. The surface morphology obtained by homoepitaxy will be discussed in relation to thermodynamically induced faceting. Finally, open questions will be identified that require further research.

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Acknowledgements

The research work by the chapter authors was performed in the framework of GraFOx, a Leibniz-Science Campus partially funded by the Leibniz Association.

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Authors and Affiliations

  1. Paul-Drude-Institut für Festkörperelektronik, Leibniz Institut im Forschungsverbund Berlin e.V, Hausvogteiplatz 5-7, 10117, Berlin, Germany

    Oliver Bierwagen, Patrick Vogt & Piero Mazzolini

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  1. Oliver Bierwagen
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  2. Patrick Vogt
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  3. Piero Mazzolini
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Correspondence to Oliver Bierwagen .

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Editors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Bierwagen, O., Vogt, P., Mazzolini, P. (2020). Plasma-Assisted Molecular Beam Epitaxy 2. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_6

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