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Diodes 2

All-Oxide pn-Heterojunction Diodes with β-Ga2O3

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Gallium Oxide

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 293))

Abstract

Due to the unipolarity and small predicted hole mobilities of \(\upbeta \text {-}\text {Ga}_{2}\text {O}_{3}\), bipolar homojunction diodes are not of relevance for this material. A valid alternative is the realization of heterojunction diodes, especially with other, p-type oxide semiconductors, as they also exhibit a high chemical stability as well as typically large bandgaps. Possible candidates for such p-type oxide semiconductors are e. g., nickel oxide, cuprous oxide, or zinc cobalt oxide. Here, the properties of \(\upbeta \text {-}\text {Ga}_{2}\text {O}_{3}\)/p-type oxide semiconductor heterojunction diodes are discussed for the different p-type semiconductors and different device layouts. Characteristic properties like ideality factor, rectification ratio, built-in potential, and breakdown voltage are compared for the different devices.

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Acknowledgements

We thank H. Hochmuth for PLD growth of the thin films and M. Hahn for the preparation of the PLD targets and photolithography of the samples. This work was financially supported by the European Social Fund within the Young Investigator Group “Oxide Heterostructures” (SAB 100310460) and partly by Deutsche Forschungsgemeinschaft in the Framework of Sonderforschungsbereich 762 “Functionality of Oxide Interfaces” and through GR 1011/27. We acknowledge support by Universität Leipzig within the research profile area “Complex Matter”.

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Authors and Affiliations

  1. Felix Bloch Institute for Solid State Physics, Linnéstr. 5, 04103, Leipzig, Germany

    Daniel Splith, Peter Schlupp, Holger von Wenckstern & Marius Grundmann

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  1. Daniel Splith
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  2. Peter Schlupp
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  3. Holger von Wenckstern
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  4. Marius Grundmann
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Correspondence to Daniel Splith .

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Editors and Affiliations

  1. National Institute of Information and Communications Technology, Koganei, Tokyo, Japan

    Masataka Higashiwaki

  2. Graduate School of Engineering, Kyoto University, Katsura, Kyoto, Japan

    Shizuo Fujita

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Splith, D., Schlupp, P., von Wenckstern, H., Grundmann, M. (2020). Diodes 2. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_37

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