Abstract
In this chapter, an overview of the current research progress on the thermal properties of beta-gallium oxide (β-Ga2O3) is provided. Thermal properties of β-Ga2O3 are of great significance to the device reliability and performance in its potential applications. Previous research through both computational and experimental studies on β-Ga2O3 using various methods is reviewed. The most notable findings are the relatively low and highly anisotropic thermal conductivity . At room temperature, the [010] direction has the highest thermal conductivity of around 25 W/mK, while that in the [100] direction is measured to be the lowest, which is around 13 W/mK. We also make comparison between β-Ga2O3 and GaN , another widely used semiconductor for power electronics . The relatively low thermal conductivity of β-Ga2O3 compared to GaN may present a major challenge for its potential applications. Another important thermal property, heat capacity , of β-Ga2O3 at room temperature is measured to be 18.7 J/mol K. On the other hand, the effective thermal conductivity in β-Ga2O3 thin film is shown to be larger than other gate oxides, providing a possibility of using it as gate dielectrics in GaN device contacts. The thermal properties discussed in this chapter might be useful for thermal management and design of β-Ga2O3 devices.
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Liu, Z., Luo, T. (2020). Thermal Properties. In: Higashiwaki, M., Fujita, S. (eds) Gallium Oxide. Springer Series in Materials Science, vol 293. Springer, Cham. https://doi.org/10.1007/978-3-030-37153-1_29
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