Abstract
In this paper, we present investigations of electron hopping conduction by measuring the temperature dependence of electrical resistivity of n- CdAs2 semiconductor. The resistivity was measured without magnetic field as well as in its presence. The experimental results indicate that below about 12.6 K, the hopping law is the dominant mechanism in our insulating sample. In the absence of a magnetic field, the temperature dependence of resistivity follows two different Efros-Shklovkii (ES) Variable Range Hopping (VRH) mechanisms () with different pre-exponential factor and different values. However, the magnetic field induced a clear crossover from ES VRH transport to another hopping exponent. In addition, no Mott VRH () is observed, suggesting that the density of states (DOS) is not a constant near the Fermi energy.
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Mott, N.F., Non-Cryst, J.: Solids 1, 1 (1968)
Mott, N.F.: Metal–insulator transitions. Taylor and Francis (1974)
Roy, A., Levy, M., Guo, X.M., Sarachik, M.P.: Phys. Rev. B 39, 10185 (1989)
Efros, A.L., Shklovskii, B.I.: J. Phys. C 8, 249 (1975)
Shklovskii, B.I., Efros, A.L.: Electronic properties of doped semiconductors. Springer-Verlag, Berlin (1984)
Abdia, R., El Kaaouachi, A., Nafidi, A., Biskupski, G., Hemine, J.: Solid State Electron. 53, 469 (2009)
Zhang, Y., Dai, P., Levy, M., Sarachik, M.P.: Phys. Rev. Lett. 64, 2687 (1990)
Ksenevich, V.K., Galibert, J., Samuilov, V.A.: Physica E 17, 389 (2003)
Shekhar, S., Prasad, V., Subramanyam, S.V.: Phys. Lett. A 360, 390 (2006)
Marcano, G., Marquez, R.: J. Phys. Chem. Solids 64, 1725 (2003)
Essaleh, L., Wasim, S.M., Galibert, J.: C. R. Physique 8, 942 (2007)
Yaoa, Yanping, Bob, Baoxue, Liua, Chunling: Curr. Appl. Phys. 18, 1492–1495 (2018)
Bai, Rekha, Chaudhary, Sujeet, Pandya, Dinesh K.: Mater. Sci. Semicond. Process. 75, 301–310 (2018)
Yildiz, A., Lisesivdin, S.B., Kasap, M., Mardare, D.: J. Non-Cryst. Solids 354, 4944–4947 (2008)
Zhang, Li, Liu, Guohong, Tang, Zhen, Deng, Yan, Li, Yibao, Jiangying, Yu., Zhu, Xuebin: Phys. B 451, 73–75 (2014)
Abdia, R., Ablehamid, E.K., Nafidi, A., Biskupski, G., Hemine, J.: Annales de Chimie. In: Science des Matériaux, vol. 33, no. 4, pp. 357–364 (2008)
Maji, S., Mukhopadhyay, S., Gangopadhyay, R., De, A.: Phys. Rev. B 75, 073202 (2007)
Novak, M., Kokanovic, L., Babic, D., Bacani, M., Tonejc, A.: Synth. Metals 159, 649 (2009)
Fogler, M.M., Teber, S., Shklovskii, B.I.: Phys. Rev. B 69, 035413 (2004)
Taunk, M., Kapil, A., Chand, S.: Solid State Commun. 150, 1766–1769 (2010)
Narjis, A., kaaouachi, A.E., Biskupski, G., Daoudi, E., Limouny, L., Dlimi, S., Errai, M., Sybous, A.: Materials science in semiconductor processing. 16, 1257–1261 (2013)
Oubraham, A.A., Biskupski, G., Zdanowicz, E.: Solid State Commun. 77, 351–354 (1991)
De Boer, J.H., Van Geel, W.C.: Physica 2, 186 (1935)
Zdanowicz, E., Wojciechowski, W., Biskupski, G., Misiewicz, J.: Mater. Sci. Eng. B, 21, 59–64 (1993)
Mott, N.F.: Metal-Insulator Transitions. Taylor and Francis, London, UK (1990)
Mott, N.F.: Phil. Mag. 6, 287 (1961)
Samuilov, V.A., Galibert, J., Ksenevich, V.K., Goldman, V.J., Rafailovich, M., Sokolov, J., Bashmakov, I.A., Dorosinets, V.A.: Phys. B 294–295, 319–323 (2001)
Iqbal, M., Galibert, J., Léotin, J., Askénazy, S., Waffenschmidt, S., Wosnitza, J., Lohneysen, H.V.: Physica B, 246–247, 282–285, (1998)
Biskupski, G., Briggs, A.: J. Non Cryst. Solids 97&98, 683–686 (1987)
Mobius, A.: Phys. Rev. B 40, 4194 (1989)
Rosenbaum, R.L., Slutzky, M., Mobius, A., McLachlan, D.S.: J. Phys.: Condens. Matter 6, 7977 (1994)
Zabrodskii, A.G., Zinovieva, K.N.: Sov. Phys. JETP 59, 345 (1984)
Wasim, S.M., Essaleh, L., Marín, G., Rincón, C., Amhil, S., Galibert, J.: Superlattices Microstruct. 107, 285–292 (2017)
Shekhar, S., Prasad, V., Subramanyam, S.V.: Phys. Lett. A 360, 390–393 (2006)
Shekhar, S., Prasad, V., Subramanyam, S.V.: Mater. Sci. Eng., B 133, 108–112 (2006)
Essaleh, L., Galibert, J., Wasim, S.M., Hernández, E., Leotin, J.: Phys. Rev. B 50, 18040 (1994)
Wasim, S.M., Essaleh, L., Marín, G., Galibert, J.: Mat. Res. Bulletin 87, 219 (2017)
Essaleh, L., Wasim, S.M., Galibert, J.: Mater. Lett. 60, 1947–1949 (2006)
Essaleh, L., Wasim, S.M.: Mater. Lett. 61, 2491–2494 (2007)
Abdia, R., kaaouachi, A.E., Nafidi, A., Hemine, J.: Physica B, 373, 96 (2006)
kaaouachi, A.E, Abdia, R., Nafidi, A., Sahsah, H., Physica E 32, 419 (2006)
Zabet-Khosousi, A., Trudeau, P.E., Suganuma, Y., Dhirani, A.A., Statt, B.: Phys. Rev. Lett. 96(15), 156403 (2006)
Miller, A., Abrahams, E.: Phys. Rev. 120, 745 (1960)
Acknowledgments
The experimental work was carried out by Abdelkrim OUBRAHAM as part of his doctoral program at the “Laboratoire de Spectroscopie Hertzienne (URA 249) de l’université des Sciences et techniques de Lille”.
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Abdia, R., Oubraham, A., Abouharim, A., El-Hami, K. (2020). Temperature-Electrical Resistivity Dependence of CdAs2 in View of Variable Range Hopping Models. In: Ezziyyani, M. (eds) Advanced Intelligent Systems for Sustainable Development (AI2SD’2019). AI2SD 2019. Lecture Notes in Electrical Engineering, vol 624. Springer, Cham. https://doi.org/10.1007/978-3-030-36475-5_26
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