Abstract
In the previous chapter, we discuss devices that control the flow of electrons or holes by making use of an electrostatic potential (intrinsic or extrinsic). Charge carriers (electrons and holes) have an additional degree of freedom in the form of spin, which may be thought of as a net magnetic moment pointing in two opposite directions, which are taken as either up-spin (\(\uparrow \)-spin) or down-spin (\(\downarrow \)-spin). In this chapter, we discuss the spin dependent properties of materials and how one may use them in devices—an area of immense scientific and technological interest, known as Spintronics.
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- 1.
There are two kinds of magnetizations associated with an electron, one due to its spin and the other one due to its orbital motion.
- 2.
\(E_{c\uparrow }\) and \(E_{c\downarrow }\) are indeed equal to each other for a paramagnetic material in the absence of a magnetic field.
- 3.
\(E_c^\uparrow \) is 0.5 eV below \(\mu _o\), and \(E_c^\downarrow \) is 0.25 eV below \(\mu _o\). These specific values are taken arbitrarily, and may vary for different materials.
- 4.
Please make a note of the reuse of the symbol S for spin density, which has been used earlier for the cross sectional area.
- 5.
Re stands for the real part of the complex number.
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Raza, H. (2019). Spin Based Devices. In: Nanoelectronics Fundamentals. NanoScience and Technology. Springer, Cham. https://doi.org/10.1007/978-3-030-32573-2_6
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DOI: https://doi.org/10.1007/978-3-030-32573-2_6
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Publisher Name: Springer, Cham
Print ISBN: 978-3-030-32571-8
Online ISBN: 978-3-030-32573-2
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