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The Structure and Chemical Composition of Ga2O3 Oxide Prepared by Annealing of Ga2Se3 Crystals

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4th International Conference on Nanotechnologies and Biomedical Engineering (ICNBME 2019)

Part of the book series: IFMBE Proceedings ((IFMBE,volume 77))

Abstract

The chemical composition and structure of Ga2O3 obtained by thermal treatment (TT) in air of β-Ga2Se3 crystals were studied using the X-ray diffraction (XRD) method, Raman spectroscopy, EDX, and SEM. The surface of the Ga2Se3 crystal air annealed at 770 K is covered by β-Ga2O3 layer of microcrystallites and as well as by β-Ga2Se3 crystallites. The oxygen is non-homogeniously distributed on the surface of the 770 K annealed sample. The sample obtained by TT at 1150 K consists of nanolamella, nanotowers, and nanobars of β-Ga2O3, their size being estimated to 10–200 nm.

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Sprincean, V., Vatavu, E., Dmitroglo, L., Untila, D., Caraman, I., Caraman, M. (2020). The Structure and Chemical Composition of Ga2O3 Oxide Prepared by Annealing of Ga2Se3 Crystals. In: Tiginyanu, I., Sontea, V., Railean, S. (eds) 4th International Conference on Nanotechnologies and Biomedical Engineering. ICNBME 2019. IFMBE Proceedings, vol 77. Springer, Cham. https://doi.org/10.1007/978-3-030-31866-6_42

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  • DOI: https://doi.org/10.1007/978-3-030-31866-6_42

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  • Online ISBN: 978-3-030-31866-6

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