Abstract
Over the last decade, the everlasting quest for efficiency has pushed the adoption of SiC and GaN transistors in power conversion solutions. These wide-bandgap devices have beneficial but challenging properties when hard-switched. In order to use them at their full potential, new trade-offs need to be made that translate to the design of custom gate drivers.
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Thoné, J., Wens, M. (2020). On the Limits of Driving Wide-Bandgap Transistors. In: Baschirotto, A., Harpe, P., Makinwa, K. (eds) Next-Generation ADCs, High-Performance Power Management, and Technology Considerations for Advanced Integrated Circuits. Springer, Cham. https://doi.org/10.1007/978-3-030-25267-0_11
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DOI: https://doi.org/10.1007/978-3-030-25267-0_11
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