Abstract
Wide bandgap semiconductors (WBGS) were initially proposed for high voltage switching devices, and now they are commercially available. However, WBGS materials also offer operation in extreme environments, including temperatures higher than silicon could operate at (300 °C or more) as well as withstanding ten times higher radiation doses. Integrated circuit (IC) technologies have been developed in silicon carbide (SiC) and gallium nitride (GaN). Several power management ICs have been demonstrated to work in the temperature range from room temperature to 500 °C, including switch drivers, linear voltage regulators, and operational amplifiers.
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Zetterling, CM., Kargarrazi, S., Shakir, M. (2020). Wide Bandgap Integrated Circuits for High Power Management in Extreme Environments. In: Baschirotto, A., Harpe, P., Makinwa, K. (eds) Next-Generation ADCs, High-Performance Power Management, and Technology Considerations for Advanced Integrated Circuits. Springer, Cham. https://doi.org/10.1007/978-3-030-25267-0_10
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DOI: https://doi.org/10.1007/978-3-030-25267-0_10
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