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Optical Properties of Bound and Localized Excitons

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Semiconductor Optics 1

Part of the book series: Graduate Texts in Physics ((GTP))

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Abstract

In the previous chapter we discussed mainly the optical properties of intrinsic free excitons. Here we consider excitons bound to various types of defects and how they are observed in optical spectra (mainly in luminescence). Excitons can also get trapped in localized states in potential fluctuations of disordered bulk materials. We will discuss how this localization affects the optical spectra and present different approaches for the modeling of localization properties. Many of these aspects are also relevant for the structures of reduced dimensionality presented in the next chapter.

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Authors and Affiliations

  1. Institute of Applied Physics, Karlsruhe Institute of Technology, Karlsruhe, Baden-Württemberg, Germany

    Heinz Kalt & Claus F. Klingshirn

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  1. Heinz Kalt
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  2. Claus F. Klingshirn
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Correspondence to Heinz Kalt .

Problems

Problems

22.1

Show by a semiquantitative guess that the A\(^-\)X complex is usually unbound.

22.2

For some standard semiconductors, such as Si, Ge, or GaAs, calculate the binding energy of electrons and holes to donors and acceptors, respectively. Find some data for the binding energies of excitons to these complexes and compare the results with Haynes’ rule.

22.3

Consider excitons localized in a tailed potential like in Fig. 22.10. Describe qualitatively the photoluminescence lineshape. Why is it useful to plot the intensity of the emission spectrum on a logarithmic scale? What do you expect for very low temperatures?

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Kalt, H., Klingshirn, C.F. (2019). Optical Properties of Bound and Localized Excitons. In: Semiconductor Optics 1. Graduate Texts in Physics. Springer, Cham. https://doi.org/10.1007/978-3-030-24152-0_22

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