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Introduction and Overview

  • Patrick FayEmail author
  • Debdeep JenaEmail author
  • Paul Maki
Chapter

Abstract

Today, gallium nitride (GaN) semiconductor-based devices light up cell phones, car headlights, and computer screens and are slowly replacing incandescent bulbs, powering a solid-state lighting revolution. But GaN’s reach now extends far beyond optoelectronics and lighting; the maturing of this semiconductor material has given us GaN electronic devices that are vying to replace microwave amplifiers in mobile phone base stations because of their higher frequency- and power-handling capacity. Because GaN and related III-N semiconductors can sustain much higher electric fields than silicon and switch faster due to a higher channel electron mobility, GaN-based electronics is also making significant inroads into replacing silicon high-voltage transistors with much smaller and energy-efficient alternatives in data centers, miniature power adapters, and convertors, as well as making strides toward higher-power, high-voltage applications such as industrial and automotive motor control.

Keywords

Gallium nitride (GaN) Solid-state lighting Microwave amplification Electric fields Electron mobility High-voltage applications Power electronics Polarization-induced two-dimensional electron gases (2DEGs) Current density Device scaling High-electron-mobility transistor (HEMT) Hot-carrier injection Resonant tunneling Plasma-wave propagation Optical phonons Transistor linearity Noncontact metrology Nitrogen isotopes Numerical simulation Device characterization 

Copyright information

© Springer Nature Switzerland AG 2020

Authors and Affiliations

  1. 1.University of Notre DameNotre DameUSA
  2. 2.Cornell UniversityIthacaUSA
  3. 3.Office of Naval ResearchArlingtonUSA

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