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Detectors in Thin Crystalline Silicon Films

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Silicon Optoelectronic Integrated Circuits

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 13))

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Abstract

Photodiodes in thin Silicon-on-Insulator (SOI) films represent a possibility to avoid slow carrier diffusion for achieving high-speed operation. CMOS circuits in Silicon-on-Sapphire (SOS) thin films allow easy hybrid integration of III/V laser diodes, since the sapphire substrate is transparent and the light can be emitted downwards through the SOS film and the sapphire substrate. Upward light emission is therefore not necessary and the III/V substrate of the VCSELs does not have to be removed. Polyimid bonding of III/V laser diodes and photodiodes on silicon as an interesting wafer-scale process also shall be described in this chapter.

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  1. EMCE, Technische Universität Wien, Vienna, Austria

    Horst Zimmermann

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  1. Horst Zimmermann
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Correspondence to Horst Zimmermann .

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Zimmermann, H. (2018). Detectors in Thin Crystalline Silicon Films. In: Silicon Optoelectronic Integrated Circuits. Springer Series in Advanced Microelectronics, vol 13. Springer, Cham. https://doi.org/10.1007/978-3-030-05822-7_3

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