Abstract
We have demonstrated the superior subthreshold performance of the proposed MESFET designs by comparison with classical SOI MESFET. According to this, we introduced and discussed the previous analytical models presented for classical SOI MESFET developed in recent years and then we offered a new exact analytical model to display the subthreshold behavior of the device. The proposed non-classical architecture presented in this study can be well extended to partially depleted SOI MESFETs.
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Amiri, I.S., Mohammadi, H., Hosseinghadiry, M. (2019). Future Works on Silicon-on-Insulator Metal–Semiconductor Field Effect Transistors (SOI MESFETs). In: Device Physics, Modeling, Technology, and Analysis for Silicon MESFET. Springer, Cham. https://doi.org/10.1007/978-3-030-04513-5_7
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DOI: https://doi.org/10.1007/978-3-030-04513-5_7
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Publisher Name: Springer, Cham
Print ISBN: 978-3-030-04512-8
Online ISBN: 978-3-030-04513-5
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