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Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction

Part of the Smart Innovation, Systems and Technologies book series (SIST,volume 130)

Abstract

This paper demonstrates the prospect of using a 3C-SiC/Si heterostructure as an ultraviolet and visible photodetector. The heterojunction has been grown epitaxially on Si-substrate via a Low Pressure Chemical Vapor Deposition technique at 1000 °C. The detector shows a good diode characteristic with a rectification ratio of 1.03 × 103 and a reverse leakage current of 7.2 × 10−6 A at 2 V in dark conditions. The responsivity of the device is found to be 5.4 × 10−2 A/W and 3.18 × 10−2 A/W at a reverse bias of 2 V under visible (635 nm) and UV (375 nm) illumination, respectively. An energy band diagram is proposed to explain the photosensitivity of the heterostructure.

Keywords

  • 3C-SiC/si heterojunction
  • Responsivity
  • UV-visible light
  • Band diagram

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Correspondence to Abu Riduan Md Foisal .

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Foisal, A.R.M. et al. (2019). Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction. In: Dao, D., Howlett, R., Setchi, R., Vlacic, L. (eds) Sustainable Design and Manufacturing 2018. KES-SDM 2018. Smart Innovation, Systems and Technologies, vol 130. Springer, Cham. https://doi.org/10.1007/978-3-030-04290-5_22

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