Abstract
The back-contact back-junction (BC-BJ) solar cells is a novel structure that increases the optoelectronic performance of the device. The two-diode model provides information regarding the different process involved in the BC-BJ solar cell operation, through the behavior of the dark current-voltage (I-V) curve, at different distances (from 200 µm to 900 µm) and widths of the emitter-Al (from 50 µm and 100 µm). Simulated results indicate that smaller width increase the performance and efficiency. In the analyzed model we get into the performance, qualities and dimensions through of electrical simulations, using the Technology Computer-Aided Design (TCAD). The saturation current densities and parasitic resistance are determined through the adjustment and optimization of the dark (I-V) curve, resulting that the longer distance the emitter increases the dark series resistance; also, the dark saturation current density is greater by decreasing the width of the emitter.
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References
Kerschaver, E., Beaucarne, G.: Back-contact solar cells: a review. Prog. Photovoltaics Res. Appl. 14(2), 107–123 (2006)
Desa, M., Sapeai, S., Azhari, A., Sopian, K., Sulaiman, M., Amin, N., Zaidi, S.H.: Silicon back contact solar cell configuration: a pathway towards higher efficiency. Renew. Sustain. Energy Rev. 60, 1516–1532 (2016)
Luque, A., Hegedus, S.: Handbook of Photovoltaic Science and Engineering. Wiley, Hoboken (2011)
Agrawal, A., Lin, J., Barth, M., White, R., Zheng, B., Chopra, S., Datta, S.: Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts. Appl. Phys. Lett. 104(11), 112101 (2014)
Khanna, V., Das, B., Bisht, D., Singh, P.: A three diode model for industrial solar cells and estimation of solar cell parameters using PSO algorithm. Renew. Energy 78, 105–113 (2015)
Fell, A., Schön, J., Müller, M., Wöhrle, N., Schubert, M., Glunz, S.: Modeling edge recombination in silicon solar cells. IEEE J. Photovolt. 8(2), 428–434 (2018)
Ceuster, D., Cousins, P., Rose, D., Vicente, D., Tipones, P., Mulligan, W.: Low cost, high volume production of >22% efficiency silicon solar cells. In: Proceedings of the 22nd European Photovoltaic Solar Energy Conference, pp. 816–819 (2007)
Köntges, M., Gast, M., Brendel, R., Meyer, R., Giegerich, A., Merz, P.: A novel photovoltaic-module assembly system for back contact solar cells using laser soldering technique. In: 23st European Photovoltaic Solar Energy Conference, pp. 1–5. Spain (2008)
Spath, M., De Jong, P.C., Bennett, I.J., Visser, T.P., Bakker, J.: A novel module assembly line using back contact solar cells. In: Photovoltaic Specialists Conference, PVSC’08. 33rd IEEE pp. 1–6. IEEE (2008)
Haug, H., Kimmerle, A., Greulich, J., Wolf, A., Marstein, E.: Implementation of Fermi-Dirac statistics and advanced models in PC1D for precise simulations of silicon solar cells. Sol. Energy Mater. Sol. Cells 131, 30–36 (2014)
Altermatt, P.P.: Models for numerical device simulations of crystalline silicon solar cells—a review. J. Comput. Electron. 10(3), 314 (2011)
Schmidt, J., Thiemann, N., Bock, R., Brendel, R.: Recombination lifetimes in highly aluminum-doped silicon. J. Appl. Phys. 106(9), 093707 (2009)
Altermatt, P.P., Steingrube, S., Yang, Y., Sprodowski, C., Dezhdar, T., Koc, S., Schmidt, J.: Highly predictive modelling of entire Si solar cells for industrial applications. In: 24th European Photovoltaic Solar Energy Conference, pp. 901–906 (2009)
Bock, R., Altermatt, P.P., Schmidt, J., Brendel, R.: Formation of aluminum–oxygen complexes in highly aluminum-doped silicon. Semicond. Sci. Technol. 25(10), 105007 (2010)
Rüdiger, M., Rauer, M., Schmiga, C., Hermle, M.: Effect of incomplete ionization for the description of highly aluminum-doped silicon. J. Appl. Phys. 110(2), 024508 (2011)
Limpert, S., Ghosh, K., Wagner, H., Bowden, S., Honsberg, C., Goodnick, S., Green, M.: Results from coupled optical and electrical sentaurus TCAD models of a gallium phosphide on silicon electron carrier selective contact solar cell. In: IEEE 40th. Photovoltaic Specialist Conference 2014, PVSC, pp. 0836–0840. IEEE (2014)
Haouari-Merbah, M., Belhamel, M., Tobias, I., Ruiz, J.M.: Method of extraction and analysis of solar cell parameters from the dark current-voltage curve. In: Spanish Conference on Electron Devices 2005, pp. 275–277. IEEE (2005)
Hussein, R., Borchert, D., Grabosch, G., Fahrner, W.R.: Dark I-V–T measurements and characteristics of (n) a-Si/(p) c-Si heterojunction solar cells. Sol. Energy Mater. Sol. Cells 69(2), 123–129 (2001)
Dkhichi, F., Oukarfi, B., Fakkar, A., Belbounaguia, N.: Parameter identification of solar cell model using Levenberg–Marquardt algorithm combined with simulated annealing. Sol. Energy 110, 781–788 (2014)
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Chuquimarca, L., Acaro, X., Gunsha, A., Villamagua, L., Sánchez, D. (2019). Two-Diode Model Parameter Evaluation from Dark Characteristics of Back-Contact Back-Junction Solar Cells. In: Antipova, T., Rocha, A. (eds) Digital Science. DSIC18 2018. Advances in Intelligent Systems and Computing, vol 850. Springer, Cham. https://doi.org/10.1007/978-3-030-02351-5_24
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DOI: https://doi.org/10.1007/978-3-030-02351-5_24
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