Abstract
The correct design of a numerical grid is crucial to the success of device modelling. This chapter describes how a grid may be designed to account for the particular features of, in particular, the MESFET and the HEMT. An initial grid is assigned to the basic structure of the device by taking into account the positions of the corners of contacts, recesses, and layer structure. This is achieved with the use of structures in C++. It is shown how extra grid points and grid lines can be assigned using pointer allocation to form a basic initial grid, and how grid lines and points can be allocated and de-allocated as the device iterations progress. Sections of code illustrate the main processes.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Copyright information
© 2009 Springer-Verlag London
About this chapter
Cite this chapter
Cole, E.A.B. (2009). Grid generation. In: Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming. Springer, London. https://doi.org/10.1007/978-1-84882-937-4_15
Download citation
DOI: https://doi.org/10.1007/978-1-84882-937-4_15
Published:
Publisher Name: Springer, London
Print ISBN: 978-1-84882-943-5
Online ISBN: 978-1-84882-937-4
eBook Packages: Mathematics and StatisticsMathematics and Statistics (R0)