Abstract
Narrow-band pass, band-pass and band-blocking IR filters are used intensively in optical communications, imaging, spectroscopy, astronomy, and many other applications. Currently available filters are based on interference in multilayer stacks and have to be used with well-collimated beams and carefully aligned angles of incidence. The angular dependence of the pass band position for IR filters used in, for example, DWDM (Dense Wavelength Division Multiplexing) requires even tighter alignment (meaning complexity) than with UV filters discussed previously in this paper due to much more strict specifications. Omnidirectional IR filters, based on macroporous silicon technology, recently proposed in [1] and reviewed in [2], have the potential to solve this problem. This type of filters is based on macroporous silicon and utilizes the waveguide transmission mode discussed in Chapter 5. It will be analyzed here in more detail.
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References
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© 2009 Springer-Verlag London Limited
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(2009). Omnidirectional IR Filters. In: Porous Semiconductors. Engineering Materials and Processes. Springer, London. https://doi.org/10.1007/978-1-84882-578-9_11
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DOI: https://doi.org/10.1007/978-1-84882-578-9_11
Publisher Name: Springer, London
Print ISBN: 978-1-84882-577-2
Online ISBN: 978-1-84882-578-9
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