Silver has been investigated as a potential interconnection material for ultra large scale integration (ULSI) technology due to its lower bulk electrical resistivity (1.57 μΩ-cm at room temperature) when compared with other interconnection materials (Al 2.7 μΩ-cm and Cu 1.7 μΩ-cm),2] The lower resistivity can reduce the RC delays and high power consumption. Also, silver has higher electromigration resistance than aluminum and the same or even higher electromigration resistance than copper. However, Ag thin film agglomeration has been observed on many substrates at high temperatures and considered as a drawback of silver metallization.
KeywordsElectrical Resistivity Sheet Resistance Rutherford Backscattering Spectrometry Silver Film Silver Metallization
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