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Generation-Recombination and Mobility

  • Massimo Rudan
Chapter

Abstract

The chapter illustrates the main contributions to the transitions of the inter-band type, that give rise to the generation-recombination terms in the continuity equations for electrons and holes, and to those of the intra-band type, that give rise to the electron and hole mobilities in the current-density equations. The inter-band transitions that are considered are the net thermal recombinations (of the direct and trap-assisted type), Auger recombinations, impact-ionization generations, and net-optical recombinations. The model for each type of event is first given as a closed-form function of the semiconductor-device model’s unknowns, like carrier concentrations, electric field, or current densities. Such functions contain a number of coefficients, whose derivation is successively worked out in the complements by means of a microscopic analysis. Some discussion is devoted to the optical-generation and recombination events, to show how the concepts of semiconductor laser, solar cell, and optical sensor may be derived as particular cases of non-equilibrium interactions between the material and an electromagnetic field. The intra-band transitions are treated in a similar manner: two examples, the collisions with acoustic phonons and ionized impurities, are worked out in some detail; the illustration then follows of how the contributions from different scattering mechanisms are combined together in the macroscopic mobility models. The material is supplemented with a brief discussion about advanced modeling methods.

Keywords

Conduction Band Valence Band Impact Ionization Acoustic Phonon Auger Recombination 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Springer Science+Business Media New York 2015

Authors and Affiliations

  1. 1.University of BolognaBolognaItaly

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