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Oxide Based Memristive Nanodevices

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Emerging Non-Volatile Memories

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Abstract

Transition metal oxide thin films play an indispensable role in nanoelectronic and nanoionic devices [1–3] proposed for the next generation non-volatile memory [4–14], neuromorphic computing [15], stateful logic [16] and hybrid CMOS–Memristor circuits [17]. The promise of metal oxide thin films comes from their wide range of electrical properties, ranging from insulating, semiconducting, metallic to even superconducting behavior [3] with exquisite dependence on the doping level. A trace level of compositional change in oxides induces a large amount of defects, which serve as native dopants in the oxide films and dramatically change their conductance [18]. Microscopically in a thin film device, the slight compositional change is in the embodiment of ionic motion, which gives rise to memristive switching under an electric field [19–21].

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Acknowledgements

We thank Julien Borghetti, Tan Ha, Cuong Le, Xuema Li, Zhiyong Li, Feng Miao, David Murphy, Janice Nickel, Douglas A. A. Ohlberg, Matthew D. Pickett, Duncan R. Stewart, John Paul Strachan, R. Stanley Williams, Qiangfei Xia, Wei Yi and Max Zhang for valuable discussions and excellent experimental assistance. This work was funded in part by the US Government’s Nano-Enabled Technology Initiative.

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Authors and Affiliations

  1. Hewlett Packard Labs, Palo Alto, CA, 94304, USA

    J. Joshua Yang

  2. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil

    Gilberto Medeiros-Ribeiro

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  1. Materials Science Division, Argonne National Laboratory, Lemont, Illinois, USA

    Seungbum Hong

  2. Materials Science & Engg Dept. and Bioengineering Dept., University of Texas-Dallas, Dallas, Texas, USA

    Orlando Auciello

  3. CMOS Technology Division, IMEC, Leuven, Belgium

    Dirk Wouters

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Yang, J.J., Medeiros-Ribeiro, G. (2014). Oxide Based Memristive Nanodevices. In: Hong, S., Auciello, O., Wouters, D. (eds) Emerging Non-Volatile Memories. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-7537-9_6

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