Preparation and Characterization of Single-Crystal Boron
Although boron was first isolated over 150 years ago, little information concerning the properties of this material is available even today. This is probably due, in large part, to the relative difficulty of obtaining pure material and the fact that it exists in amorphous form and several crystalline modifications. Renewed interest in the properties of this material has been stimulated in recent years by the potential use of boron in semiconductor devices, high-energy fuels, and structural materials. To learn more about these properties a program was initiated in this laboratory to produce and characterize high-purity, single crystals of boron. A vapor deposition technique was used to form polycrystalline boron rods on fine tungsten filaments. The polycrystalline rods were then zone-refined to produce single crystals of boron. Single crystals thus produced were characterized in several ways. The techniques used and the results obtained are reported below.
KeywordsThermoelectric Power Flexural Modulus Tungsten Content Thermoelectric Voltage Plate Holder
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