Abstract
In this paper attention is turned to the ‘deep’ impurity levels in semiconductors concentrating in the first place on Germanium and Silicon.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Similar content being viewed by others
References
Shockley, W. and Moll, J. L., 1960, Phys. Rev., 119, 1480
Hall, H. J., and Racette, J. H., 1964, Jour. Appl. Phys., 35, 379.
Putley, E. H., 1968, “Hall Effect and Semiconductor Physics”, Dover Publications Inc., New York.
Putley, E. H., 1964, Physica Status Solidi, 6, 571.
Schibli, E., and Milnes, A. G., 1967, Mats. Sci. and Eng, 2, 173
Bullis, W. M., 1966, Solid State Electronics, 9, 143.
Ziman, J., 1967, Proc. Phys. Soc., 91, 701.
Schink, N., 1965, Solid State Electronics, 8, 767.
Whelan, J. M., Struthers, J. D., Ditzenberger, J. A., 1967, Proc. International Conference on Semiconductors, Prague, p.943.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1969 Springer Science+Business Media New York
About this chapter
Cite this chapter
Parkinson, D.H. (1969). Impurities in Semiconductors — II. In: Haidemenakis, E.D. (eds) Electronic Structures in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6537-0_8
Download citation
DOI: https://doi.org/10.1007/978-1-4899-6537-0_8
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-6250-8
Online ISBN: 978-1-4899-6537-0
eBook Packages: Springer Book Archive