Abstract
Impurity centres dominate the electrical properties of semiconductors because they introduce extra energy levels into the forbidden electronic energy band gap. In spite of being studied intensively for a long time, even in Germanium and Silicon, our knowledge of their behaviour is most imperfect. In these papers attention will be focussed primarily on these relatively simple materials.
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Parkinson, D.H. (1969). Impurities in Semiconductors — I. In: Haidemenakis, E.D. (eds) Electronic Structures in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6537-0_7
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DOI: https://doi.org/10.1007/978-1-4899-6537-0_7
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