Electronics pp 101-139 | Cite as

Active Devices 2—Semiconductors

  • G. H. Olsen


In 1948 the American physicists, J. Bardeen and W. H. Brattain announced the invention of the transistor1, a new type of amplifying device made from semiconducting crystals. Very few at that time could have foreseen the revolutionary developments that were to follow, developments so important and far-reaching as to change the whole outlook of the science and technology of electronics. The physical principles involved in transistor action2 had been worked out in conjunction with their colleague, W. Shockley; and in recognition of their work the three physicists were awarded jointly the 1956 Nobel Prize for Physics.


Drain Current Depletion Layer Free Charge Carrier Tunnel Diode Reverse Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Bardeen, J. and Brattain, W. H. Transistor, a semiconductor triode.’ Phys. Rev. 1948, 74, 230.ADSCrossRefGoogle Scholar
  2. 2.
    Bardeen, J. and Brattain, W. H. ‘Physical principles involved in transistor action’. Phys. Rev. 1949, 75, 1208.ADSCrossRefGoogle Scholar
  3. 2a.
    Also Shockley, W. ‘The theory of pn junctions in semiconductors and pn junction transistors’. Bell Syst. Tech. J. 1949, 28, 435.CrossRefGoogle Scholar
  4. 3.
    Olsen, G. H. ‘Field effect devices’. Wireless World, 1965, 71, No. 6, 260, June.Google Scholar
  5. 4.
    Application Note No. 22 ‘Field Effect Transistors and Applications’. Ferranti Ltd., Oldham, Lancs.Google Scholar
  6. 5.
    Hofstein, S. R. and Heiman, F. P. ‘The silicon insulated-gate-field-effect transistor’. Proc. I.E.E.E. 1963, 51, 1190, Sept. 1963.Google Scholar
  7. 6.
    Weimer, P. K. ‘The T.F.T.—a new thin film transistor’. Proc. I.R.E. 1962, 50, 1462, June.CrossRefGoogle Scholar
  8. 7.
    Weimer, P. K., Shallcross, F. V., and Borkan, H. ‘Coplanar-electrode insulated-gate thin-film transistors’. R.C.A. Rev. 1963, 24, No. 4, Dec.Google Scholar
  9. 8.
    Zener, C. ‘Theory of electrical breakdown of solid dielectrics’ Proc. Roy. Soc. 1934, 145, 523.ADSCrossRefGoogle Scholar
  10. 9.
    Esaki, L. ‘New Phenomenon in Narrow Germanium p-n Junctions’. Phys. Rev. 1958, 109, 603, Jan.15.ADSCrossRefGoogle Scholar
  11. 10.
    Gosling, W. Field Effect Transistor Applications. Hey wood, 1964.Google Scholar
  12. 11.
    Sevin, L. J. Field Effect Transistors. McGraw-Hill, 1965.Google Scholar

Copyright information

© G. H. Olsen 1968

Authors and Affiliations

  • G. H. Olsen
    • 1
  1. 1.Physics Dept.Rutherford College of TechnologyUK

Personalised recommendations