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Transient Processes in Diodes During the Passage of a Forward Current Pulse

  • Yurii R. Nosov
Part of the Monographs in Semiconductor Physics book series (MOSEPH)

Abstract

We have established that when a forward bias is applied to a diode, an equilibrium distribution of free carriers in the base is not established instantaneously but after a certain time interval.

Keywords

Current Pulse Voltage Drop Transient Process Base Resistance Hole Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1969

Authors and Affiliations

  • Yurii R. Nosov
    • 1
  1. 1.A. F. Ioffe Physicotechnical InstituteLeningradUSSR

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