Abstract
The purpose of this chapter is to describe recent theoretical and experimental studies on the properties of electrons in solids in the presence of crossed electric and magnetic fields. Semiconducting materials are best suited for such studies for the following reasons. First, the relatively high resistivity of semiconductors makes it possible to apply electric fields of the order of 103 V/cm in pure materials and 104-105 V/cm in reverse-biased p-n junctions. Second, the small effective masses of electrons makes it possible for one to observe the magnetic field effects clearly, since the separation between Landau levels is given in terms of ℏω c = ℏeH/mc. For a magnetic field of H = 100 kG and the free-electron mass this is equal to ~0.001 eV, so that in semiconductors like InSb (m ≈ 0.013 m 0) energy separations of the order of 0.1 eV are achievable. Finally, due to low free-carrier densities a thin slab of a semiconducting material can transmit a light beam fairly well, which greatly facilitates the optical studies. Also, as we shall see later, narrow forbidden energy gaps, with resulting strong interaction between the conduction and valence bands, introduce a variety of interesting physical effects.
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Supported by the U. S. Air Force Office of Scientific Research.
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References
L. D. Landau and E. M. Lifshitz, Classical Theory of Fields, Addison-Wesley Inc., Reading, Massachusetts, 1959.
A. G. Aronov, Soviet Phys.-Solid State (English Transl.) 5: 402 (1963). The value of the matrix element calculated in this paper contains an error [see (4)].
L. M. Roth, B. Lax, and S. Zwerdling, Phys. Rev. 114: 90 (1959).
Q. H. F. Vrehen and B. Lax, Phys. Rev. Letters 12: 471 (1964);
Q. H. F. Vrehen, Phys. Rev. 145: 675 (1966).
W. Zawadzki, Q. H. F. Vrehen, and B. Lax, Phys. Rev. 148: 849 (1966).
Q. H. F. Vrehen, W. Zawadzki, and M. Reine, Phys. Rev. 158: 702 (1967).
J. Zak and W. Zawadzki, Phys. Rev. 145: 536 (1966).
E. O. Kane, J. Phys. Chem. Solids 1: 249 (1957).
R. Bowers and Y. Yafet, Phys. Rev. 115: 1165 (1959).
W. Zawadzki and B. Lax, Phys. Rev. Letters 16: 1001 (1966).
J. M. Luttinger and W. Kohn, Phys. Rev. 97: 869 (1955).
H. Weiler, W. Zawadzki, and B. Lax, Phys. Rev., 163: 733 (1967);
W. Zawadzki, in : Proceedings of the Advanced Summer Institute on Tunneling Phenomena in Solids, Risø, Denmark, 1967, Plenum Press, New York, 1968.
A. G. Aronow and G. E. Pikus, Soviet Phys.-JETP (English Transl.) 24: 188, 339 (1967); also, in: “Proceedings of the International Conference on the Physics of Semiconductors, Kyoto, 1966,” J. Phys. Soc. Japan Suppl. 21: 608 (1966).
M. Reine, Q. H. F. Vrehen, and B. Lax, Phys. Rev., 163: 726 (1967).
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Zawadzki, W. (1969). Bloch Electrons in Crossed Electric and Magnetic Fields. In: Haidemenakis, E.D. (eds) Physics of Solids in Intense Magnetic Fields. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5508-1_14
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DOI: https://doi.org/10.1007/978-1-4899-5508-1_14
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