Abstract
During the past ten years, we have seen an unprecedented interest in the electrodeless r.f. glow discharge technique as a method for depositing thin films of non-crystalline semiconductors. This is, in the main, due to the great advances in the understanding of the behaviour of glow discharge (GD) deposited amorphous silicon (a-Si) that followed the successful n and p-type doping announced by Spear and Le Comber in 19751 and the subsequent demonstration of practical a-Si solar cells.2,3
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Chittick, R.C., Sterling, H.F. (1985). Glow Discharge Deposition of Amorphous Semiconductors: The Early Years. In: Adler, D., Fritzsche, H. (eds) Tetrahedrally-Bonded Amorphous Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-5361-2_1
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DOI: https://doi.org/10.1007/978-1-4899-5361-2_1
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