Abstract
Inelastic light scattering has been used extensively in the past ten years to study phonon properties and electronic excitations in heterostructures, quantum wells and superlattices.1 Most of the experiments were performed in backscattering geometry normal to the layers or interfaces. This limits the possibilities of exciting in-plane excitations. Due to the high refractive index of GaAs the accessible in-plane wave vector is q|| = 1.7 105 cm-1 in the usual backscattering geometry with the exciting laser wavelength in the red spectral range. The dispersion of plasmons in layered 2D-electron systems has been studied, for example, in this limited wave-vector range.2 A first extension of the in-plane wave-vector was achieved by a 90° scattering geometry.3 The dispersion of interface phonon-polaritons in a GaAs/ AlAs heterostructure has been studied by Nakayama et al.,4 also in a quasi-back-scattering geometry from the (100) surface. Otherwise excitations with large in-plane wave-vectors have been observed under resonance conditions due to wave vector non-conservation.5,6,7 This, however, does not allow the extraction of detailed information on the dispersion of in-plane excitations.
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References
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Abstreiter, G., Beeck, S., Egeler, T., Huber, A. (1991). Micro-Raman Spectroscopy for Large In-Plane Wave Vector Excitations in Quantum-Well Structures. In: Lockwood, D.J., Young, J.F. (eds) Light Scattering in Semiconductor Structures and Superlattices. NATO ASI Series, vol 273. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3695-0_40
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