Abstract
Time-resolved, space-imaged Raman spectroscopy has been employed to study the transport properties of excitons in GaAs quantum wells. For an injected exciton density of nex=1.5×1011 cm-2, the experimental results show that exciton transport can be well described by a simple diffusion model. Based on the temperature and well-width dependence of the deduced diffusion constant, we demonstrate that at low temperatures (i.e. T < 60K), the transport of excitons in GaAs quantum wells is primarily governed by two dominant mechanisms: acoustic phonon scattering and interface roughness scattering.
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© 1991 Springer Science+Business Media New York
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Tsen, K.T., Sankey, O.F. (1991). Time-Resolved Raman Studies of the Transport Properties of Excitons in GaAs Quantum Wells. In: Lockwood, D.J., Young, J.F. (eds) Light Scattering in Semiconductor Structures and Superlattices. NATO ASI Series, vol 273. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3695-0_28
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DOI: https://doi.org/10.1007/978-1-4899-3695-0_28
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