Abstract
Recent advances in technologies and fabrication of highly integrated semiconductor devices have increased the need for technique of non-destructive characterization and microanalysis. Raman microprobe spectroscopy has considerable promise as a diagnostic tool in the field of semiconductors1.
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Nakashima, S. (1991). Raman Microprobe Study of Semiconductors. In: Lockwood, D.J., Young, J.F. (eds) Light Scattering in Semiconductor Structures and Superlattices. NATO ASI Series, vol 273. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-3695-0_21
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