In-Situ Particle Monitoring in a Plasma Etcher
A particle sensor appropriate for use with plasma etchers used in VLSI processes has been demonstrated. The sensor uses laser light scattering to detect particles, with 0.3 μm diameter being the smallest detectable particle size, and is protected from attack by reactive halogens. Correlation between sensor particle count levels and wafer surface particle counts is demonstrated. Count rates are sufficient to allow use in both process optimization and process control applications. Examples of count rates as a function of process parameters are shown. Both short-term episodic events and long-term trends related to etcher operation are seen during production monitoring.
KeywordsPreventive Maintenance Particle Count Plasma Etcher Particle Level Surface Scanner
Unable to display preview. Download preview PDF.
- 1.T. Fukumoto and T. Omori, Total contamination control technology in VLSI wafer fabrication process, Semicon West Technical Proceedings, p. 3, 1988.Google Scholar
- 2.R. W. Martin, Defect density management, Proceedings of the International Committee of Contamination Control Societies (ICCCS) meeting, p. 1, Los Angeles, Sept. 1988.Google Scholar
- 4.T. C. Smith, this volume.Google Scholar
- 5.P. G. Borden in “Particles in Gasses and Liquids 1,” K. L. Mittal, editor, Plenum Press, New York, 1989.Google Scholar
- 6.B. J. Tullis, A method of measuring and specifying particle contamination by process equipment, Microcontamination, 67 (November 1985).Google Scholar
- 8.W. Weisenberger, R. Van Moorleghem, P. Borden and W. Knodle, Realtime, in-situ particle monitoring in a high current ion implantation production bay, Proceedings of the 7th International Conference on Ion Implantation Technology, p. 163, Kyoto, June 1988.Google Scholar
- 9.P. Borden and W. Knodle, Monitoring particles in vacuum equipment, Proceedings of the 9th International Symposium on Contamination Control, p. 204, Los Angeles, Sept.1988.Google Scholar
- 10.W. C. Hinds, “Aerosol Technology,” Ch. 3, Wiley Interscience, New York, 1982.Google Scholar
- 11.B. Fishkin and E. J. Baker, Particle performance evaluation of CVD and epitaxial processes and equipment,” Proceedings of the 1988 Annual Meeting of the Institute of Environmental Sciences, p. 517.Google Scholar
- 12.G. S. Selwyn, J. Singh and R. S. Bennett, J. Vac. Sci. Technol. A7(4), 2758, (Jul/Aug 1989).Google Scholar