Abstract
An enormous amount of data and information on plasmas has been gathered up till now. How has all this information been obtained? This point is not only of academic interest, but measurement of plasma properties instead of reading machine settings reduces the amount of “black-magic” involved in etching. In fact, certain diagnostic methods are a prerequisite for precise control of etching processes. Over the years a large number of techniques have been developed; these usually require some in situ “sensor” to measure the etch rates or to detect the endpoint when a film has been etched through to expose the underlying material.
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© 1991 Springer Science+Business Media New York
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van Roosmalen, A.J., Baggerman, J.A.G., Brader, S.J.H. (1991). Diagnostics and Endpoint Detection. In: Dry Etching for VLSI. Updates in Applied Physics and Electrical Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-2566-4_7
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DOI: https://doi.org/10.1007/978-1-4899-2566-4_7
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4899-2568-8
Online ISBN: 978-1-4899-2566-4
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