Selective and Nonplanar Metal Organic Vapour Phase Epitaxy

  • R. Baets
  • P. Demeester
  • P. Van Daele
Part of the NATO ASI Series book series (NSSB, volume 198)


During the last years, there has been a fast increase in the complexity of optical and optoelectronic devices. Their fabrication makes use of special growth techniques which need more understanding of the basic processes occuring during the growth. The specific features of those techniques will result in new devices bat they are also very useful to simplify the fabrication schemes of existing devices. One of those techniques is selective epitaxial growth where the substrate is partly masked in order to obtain only monocrystalline deposition in the windows opened in the mask. Nonplanar epitaxial growth makes use of patterned substrates. Mesas, channels or more complex structures are etched in the substrate through a mask which is removed after etching. The combination of both techniques will result in selective nonplanar growth. This is obtained by growing on a substrate where the mask is leaved, after patterning.


Growth Behaviour Growth Velocity Selective Growth Laser Structure Metal Organic Vapour Phase Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • R. Baets
    • 1
  • P. Demeester
    • 1
  • P. Van Daele
    • 1
  1. 1.Laboratory of Electromagnetism and AcousticsUniversity of Gent-IMECGentBelgium

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