CVD of SiC and A1N Thin Films Using Designed Organometallic Precursors

  • Leonard V. Interrante
  • Corinna L. Czekaj
  • Wei Lee
Part of the NATO ASI Series book series (NSSB, volume 198)


The chemical and physical properties of aluminum nitride have made it an attractive prospect for a wide range of applications in electronics, including substrates for integrated circuits, thin film dielectrics, protective coatings, and surface acoustic wave devices.(1,2) It is a good electrical insulator with a direct band gap of 6 eV. In addition, it has a high decomposition temperature (ca. 2400°C), good chemical stability, a thermal expansion coefficient closely matched to that of silicon, high thermal conductivity, and a dielectric constant close to that of Al2O3.


Auger Electron Spectroscopy Aluminum Nitride Thermal Desorption Spectroscopy Thin Film Dielectric Organometallic Precursor 
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  1. 1.
    Slack, G.A. J. Phys. Chem. Solids, 34, 321, (1973).ADSCrossRefGoogle Scholar
  2. 2.
    Kurokawa, Y.; Utsumi, K; Takamizawa, H.; Kamata, T.; Noguchi, S. IEEE Trans, on CHMT., 8, 247, (1985).Google Scholar
  3. 3.
    Pauleau, Y.; Bouteville, A.; Hantzperque, J.; Remy, J. J. Electrochem. Soc. 127, 1532, (1980).CrossRefGoogle Scholar
  4. 4.
    Pauleau, Y.; Bouteville, A.; Hantzperque, J.; Remy, J.; Cachard, A.J. Electrochem. Soc. 129, 1046, (1982).CrossRefGoogle Scholar
  5. 5.
    Pauleau, Y.; Bouteville, A.; Hantzperque, J.; Remy, J.; Cachard, A. Bull. Soc. Chlm. Fr. I, 127, (1980).Google Scholar
  6. 6.
    Chu, T.L.; Kelm, K.W. J. Electrochem. Soc. 122, 996, (1975).Google Scholar
  7. 7.
    Bauer, J.; Biste, L.; Bolze, D. Phys. Stat. Sol. (A) 39, 173, (1977).ADSCrossRefGoogle Scholar
  8. 8.
    Grekov, F.F.; Demidov, D.M.; Zykov, A.M.; Sawin, G.S. J. Appl. Chem. USSR 10, 57, (1978).Google Scholar
  9. 9.
    Barovskii, N.V.; Kudakov, U.D.; Sokolov, E.B.; Siedin, V.G. Inorg. Mater. 1405, (1980).Google Scholar
  10. 10.
    Norieka, A.J.; Ing, D.W. J. Appl. Physics 39, 5578, (1968).ADSCrossRefGoogle Scholar
  11. 11.
    Manasevit, H.M.; Erdmann, F.M.; Simpson, W.I.J. Electrochem. Soc. 118, 1864, (1971).CrossRefGoogle Scholar
  12. 12.
    Rensch, U.; Eichorn, G. Phys. Stat. Sol. (A) 77, 195, (1983).ADSCrossRefGoogle Scholar
  13. 13.
    Rensch, U.; Eichorn, G. Phys. Stat. Sol. (A) 69, k3, (1982).ADSCrossRefGoogle Scholar
  14. 14.
    Lakin, K.M.; Liu, J.K.; Wang, K.L. J. Vac. Sci. Technol. 13, 37, (1976).ADSCrossRefGoogle Scholar
  15. 15.
    Duffy, M.T. Wang, G.C.; O’clock, G.D.; McFarlane, S.H.; Zanzacchi, P.J. J. Electron Mater. 2, 359, (1973).ADSCrossRefGoogle Scholar
  16. 16.
    Pizzarello, K.A.; Coker, J.E. J. Electron. Mater. 4, 25, (1975).ADSCrossRefGoogle Scholar
  17. 17.
    Takahashi, Y.; Yamashita, K.; Motojima, S.; Sugiyama, K. Surf. Sci. 86, 238, (1979).ADSCrossRefGoogle Scholar
  18. 18.
    Schulze, R.K.; Mantell, D.R.; Gladfelter, W.L.; Evans, J. F. submitted to J. Vac. Sci. Technol. A. Google Scholar
  19. 19.
    Interrante, L.V.; Carpenter, L.E.; Whitmarsh, C; Lee, W.; Garbaukas, Slack, G.A. Mat. Res. Soc. Symp. Proc. 73, 359, (1986).CrossRefGoogle Scholar
  20. 20.
    Interrante, L.V.; Lee, Wei; McConnell, M.; Lewis, N.; Hall, E. J. Electrochem Soc., in press.Google Scholar
  21. 21.
    Greenwood, N.N.; Earnshaw, A. Chemistry of the Elements. New York: Permagon Press, 1984.Google Scholar
  22. 22.
    Schlichting, J. Powder Met. Intl. 12, 141 (1980).Google Scholar
  23. 23.
    Weis, J.R.; Diefendorf, R.J., in Marshall, R.C.; Faust, J.W.; Ryan, C.E. Silicon_Carbide-1973. Columbia, South Carolina: University of South Carolina Press, 1973.Google Scholar
  24. 24.
    Fritz, G.; Schmid, H.-K. Z. Anorg. Allg. Chem. 441, 125, (1978).CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • Leonard V. Interrante
    • 1
  • Corinna L. Czekaj
    • 1
  • Wei Lee
    • 1
  1. 1.Department of ChemistryRensselaer Polytechnic InstituteTroyUSA

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