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CVD of SiC and A1N Thin Films Using Designed Organometallic Precursors

  • Leonard V. Interrante
  • Corinna L. Czekaj
  • Wei Lee
Part of the NATO ASI Series book series (NSSB, volume 198)

Abstract

The chemical and physical properties of aluminum nitride have made it an attractive prospect for a wide range of applications in electronics, including substrates for integrated circuits, thin film dielectrics, protective coatings, and surface acoustic wave devices.(1,2) It is a good electrical insulator with a direct band gap of 6 eV. In addition, it has a high decomposition temperature (ca. 2400°C), good chemical stability, a thermal expansion coefficient closely matched to that of silicon, high thermal conductivity, and a dielectric constant close to that of Al2O3.

Keywords

Auger Electron Spectroscopy Aluminum Nitride Thermal Desorption Spectroscopy Thin Film Dielectric Organometallic Precursor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • Leonard V. Interrante
    • 1
  • Corinna L. Czekaj
    • 1
  • Wei Lee
    • 1
  1. 1.Department of ChemistryRensselaer Polytechnic InstituteTroyUSA

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