Multiphoton Ionization/Mass Spectrometric Study of OMCVD Mechanisms Under Single Gas-Surface Collision Conditions
In order to elucidate the mechanisms of gas-surface reactions related to the synthesis of III/V-semiconductors by organometallic chemical vapor deposition (OMCVD), we have recently carried out a series of experiments using the technique of resonance-enhanced multiphoton ionization/mass spectrometry (REMPI/MS) to detect gas phase products under single gassurface collision conditions.1–5 The technique has the inherent optical specificity of laser spectroscopy and mass selectivity of mass spectrometry. Accordingly, for the mass-selected REMPI detection of atomic and free radical species, concentrations at 103–104 particles/cc level can be readily detected.6 Aside from the detection of transient gaseous species by laser ionization, stable products such as CH4 and C2H6 can also be detected in our experiments and their concentrations measured by means of the conventional electron impact ionization/mass spectrometry (EI/MS) with appropriate calibrations.
KeywordsCopper Substrate Deposition Reaction Free Radical Species Desorption Energy Mass Selectivity
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