In Situ Raman Studies of AsH3, and TMG Thermal Decomposition in GaAs MOVPE Conditions
Decomposition of arsine and trimethylgallium (TMG) was studied by Raman spectroscopy in atmospheric pressure MOVPE conditions.
The aerothermy of a standard vertical reactor allowing the growth of 2 inch-layers was first studied by simultaneous use of Raman spectroscopy and laser visualization.
The decomposition of AsH3 close to MOVPE conditions was investigated in this reactor. With H2 carrier gas it takes place in the temperature range 150–550°C close to the GaAs substrate. This one is warmed at 650°C by mean of a RF heated graphite susceptor on which it stays.
The broadening and shift towards lower wavenumbers of the observed As-H symmetric stretching vibration band versus temperature suggested the presence of AsH. The AsH and AsH3 simulated spectra made it possible to explain experimental results.
TMG decomposition study is in progress. Until now we noticed common features with AsH3 decomposition such as intermediate species Ga(CH3)n (n < 3) occurrence.
KeywordsMetalorganic Vapor Phase Epitaxy Metal Organic Vapor Phase Epitaxy Graphite Susceptor Harmonic Oscillator Approximation Perforated Disk
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