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Monitoring Chemical Reactions in Metal-Organic Chemical Vapour Deposition (MOCVD)

  • J. O. Williams
  • R. Hoare
  • N. Hunt
  • M. J. Parrott
Part of the NATO ASI Series book series (NSSB, volume 198)

Abstract

The success of metal-organic vapour deposition (MOCVD) as a preparative technique for thin film III/V semiconductors1,2 has prompted considerable interest in the chemistry of deposition. At present, little is known concerning the reaction processes, excepting that the precursors are thermally decomposed. It is believed that surface reactions are important to both pyrolysis and MOCVD growth although relative contributions from gas phase and surface processes have not been quantified. Analysis of alkyl metal reactants and their reactions is complicated by their pyrophoric nature and their propensity towards hydrolysis by traces of moisture contained within the analytical system.

Keywords

Free Radical Process Ethane Ratio Abstract Hydrogen MOCVD Growth Preparative Technique 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • J. O. Williams
    • 1
  • R. Hoare
    • 1
  • N. Hunt
    • 1
  • M. J. Parrott
    • 1
  1. 1.Solid State Chemistry Group and Centre for Electronic MaterialsUMISTManchesterUK

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