Growth of Semi-Conductors by Thermal MOVPE

  • J. O. Williams
  • M. D. Scott
Part of the NATO ASI Series book series (NSSB, volume 198)


No general agreement exists on the mechanism of growth of compound semi-conductors by thermal MOVPE. Evidence has been gained from both in-situ and ex-situ measurements at one atmosphere or reduced pressure in actual or “erzatz” reactors. The interpretation of this data is not always clear cut and diametrically opposite conclusions can be drawn from apparently similar experimental data.


Homolytic Fission Aluminium Nitride Hydrogen Abstraction Reaction MOVPE Growth Detailed Kinetic Analysis 
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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • J. O. Williams
    • 1
  • M. D. Scott
    • 2
  1. 1.Chemistry DepartmentUMISTManchesterEngland
  2. 2.Allen Clark Research CentrePlessey, CaswellTowcesterUK

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