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Growth of Semi-Conductors by Thermal MOVPE

  • J. O. Williams
  • M. D. Scott
Part of the NATO ASI Series book series (NSSB, volume 198)

Abstract

No general agreement exists on the mechanism of growth of compound semi-conductors by thermal MOVPE. Evidence has been gained from both in-situ and ex-situ measurements at one atmosphere or reduced pressure in actual or “erzatz” reactors. The interpretation of this data is not always clear cut and diametrically opposite conclusions can be drawn from apparently similar experimental data.

Keywords

Homolytic Fission Aluminium Nitride Hydrogen Abstraction Reaction MOVPE Growth Detailed Kinetic Analysis 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media New York 1989

Authors and Affiliations

  • J. O. Williams
    • 1
  • M. D. Scott
    • 2
  1. 1.Chemistry DepartmentUMISTManchesterEngland
  2. 2.Allen Clark Research CentrePlessey, CaswellTowcesterUK

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