Growth of Semi-Conductors by Thermal MOVPE
No general agreement exists on the mechanism of growth of compound semi-conductors by thermal MOVPE. Evidence has been gained from both in-situ and ex-situ measurements at one atmosphere or reduced pressure in actual or “erzatz” reactors. The interpretation of this data is not always clear cut and diametrically opposite conclusions can be drawn from apparently similar experimental data.
KeywordsHomolytic Fission Aluminium Nitride Hydrogen Abstraction Reaction MOVPE Growth Detailed Kinetic Analysis
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