Some Considerations of the Kinetics and Thermodynamics of CVD Processes
For many years the growth by chemical vapour deposition of polycrystalline and amorphous layers of thin films for microelectronic applications was carried out in atmospheric pressure, cold wall reactors. At present the standard method for the growth of such layers in the semiconductor industry is by the use of low pressure (e.g. ~0.1–1 mbar) hot wall reactors1. Examples of layers currently being produced by LPCVD within the semiconductor industry include polysilicon, doped polysilicon, silicon dioxide, semi-insulating polysilicon (SIPOS), nitrogen enriched polysilicon, doped silicon dioxide and glasses, tungsten, aluminium, and silicides.
KeywordsFlow Rate Ratio Dope Silicon Dioxide Wafer Edge Heterogeneous Rate Constant Dope Polysilicon
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- 3.K. F. Jensen, M. L. Hitchman and W. Ahmed, in “Proc 5th European Conf. on CVD”, J-O Carlsson and J. Lindstrom, eds., Uppsala, p. 144 (1985)Google Scholar
- 7.M. L. Hitchman, W. Ahmed, S. Shamlian and M. Trainor, Chemtronics, 2: 147 (1987)Google Scholar
- 12.P. John and J. H. Purnell, J. Chem. Soc, 69: 1455 (1973)Google Scholar
- 14.J. M. Jasinski and J. O. Chu, J. Chem. Phys., in press, (1988)Google Scholar
- 16.J. R. Acton and P. T. Squire, “Solving Equations with Physical Understanding”, Adam Hilger, Bristol, (1985)Google Scholar